RU20T7G
N-Channel Advanced Power MOSFET
MOSFET
Features
• 20V/7A,
R
DS (ON)
=12
mΩ
(Typ.) @ V
GS
=4.5V
R
DS (ON)
=18
mΩ
(Typ.) @ V
GS
=2.5V
• Super High Dense Cell Design
•
Reliable and Rugged
Pin Description
TSSOP-8
•
ESD Protected
• Lead Free and Green Available
Applications
•
PWM Applications
Dual N-Channel MOSFET
Absolute Maximum Ratings
Symbol
Parameter
Rating
20
±8
150
-55 to 150
T
A
=25°C
2
①
Unit
Common Ratings
(T
A
=25°C Unless Otherwise Noted)
V
DSS
V
GSS
T
J
T
STG
I
S
I
DP
I
D
Drain-Source Voltage
Gate-Source Voltage
Maximum Junction Temperature
Storage Temperature Range
Diode Continuous Forward Current
V
°C
°C
A
Mounted on Large Heat Sink
300μs Pulse Drain Current Tested
Continuous Drain Current(VGS=4.5V)
T
A
=25°C
T
A
=25°C
T
A
=70°C
P
D
R
θJA
②
28
A
A
7
5.5
1.5
0.96
83.5
Maximum Power Dissipation
Thermal Resistance-Junction to Ambient
T
A
=25°C
T
A
=70°C
W
°C/W
Copyright© Ruichips Semiconductor Co., Ltd
Rev. A– SEP., 2012
www.ruichips.com
RUICHIPS [ RUICHIPS SEMICONDUCTOR CO., LTD ]
