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RU2HE2D 参数 Datasheet PDF下载

RU2HE2D图片预览
型号: RU2HE2D
PDF下载: 下载PDF文件 查看货源
内容描述: N沟道先进的功率MOSFET [N-Channel Advanced Power MOSFET]
分类和应用:
文件页数/大小: 8 页 / 242 K
品牌: RUICHIPS [ RUICHIPS SEMICONDUCTOR CO., LTD ]
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RU2HE2D
N-Channel Advanced Power MOSFET
MOSFET
Features
• 200V/1.2A,
R
DS (ON)
=0.95Ω (Typ.)
@
V
GS
=10V
R
DS (ON)
=1Ω (Typ.)
@
V
GS
=4.5V
ESD Protected
Reliable and Rugged
• Fast Switching
• Lead Free and Green Available
Pin Description
SOT-223
Applications
Power Management
DC-DC Converter
N-Channel MOSFET
Absolute Maximum Ratings
Symbol
Parameter
Rating
200
±20
150
-55 to 150
T
A
=25°C
T
A
=25°C
T
A
=25°C
T
A
=70°C
T
A
=25°C
T
A
=70°C
1
4.5
1.2
0.9
2.5
1.6
50
W
°C/W
Unit
Common Ratings
(T
A
=25°C Unless Otherwise Noted)
V
DSS
V
GSS
T
J
T
STG
I
S
Drain-Source Voltage
Gate-Source Voltage
Maximum Junction Temperature
Storage Temperature Range
Diode Continuous Forward Current
V
°C
°C
A
A
A
Mounted on Large Heat Sink
I
DP
300μs Pulse Drain Current Tested
I
D
P
D
R
θJA
Continuous Drain Current
Maximum Power Dissipation
Thermal Resistance-Junction to Ambient
Copyright© Ruichips Semiconductor Co., Ltd
Rev. B – JUL., 2011
www.ruichips.com