RU30120M
N-Channel Advanced Power MOSFET
MOSFET
Features
• 30V/120A,
R
DS (ON)
=2mΩ(tpy.)@V
=10V
R
DS (ON)
=2.9mΩ(tpy.)@V
=4.5V
•
Super High Dense Cell Design
•
Reliable and Rugged
•
100% avalanche tested
• Lead Free and Green Devices Available
(RoHS Compliant)
Pin Description
PDFN 5X6
Applications
•
DC/DC Conversion
•
Switching Application
N-Channel MOSFET
Absolute Maximum Ratings
Symbol
Parameter
Rating
30
±20
150
-55 to 150
T
C
=25°C
50
①
Unit
Common Ratings
(T
C
=25°C Unless Otherwise Noted)
V
DSS
V
GSS
T
J
T
STG
I
S
Drain-Source Voltage
Gate-Source Voltage
Maximum Junction Temperature
Storage Temperature Range
Diode Continuous Forward Current
V
°C
°C
A
Mounted on Large Heat Sink
I
DP
300μs Pulse Drain Current Tested
T
C
=25°C
T
C
=25°C
I
D
Continuous Drain Current(V
GS
=10V)
T
C
=100°C
T
A
=25°C
T
A
=70°C
T
C
=25°C
P
D
Maximum Power Dissipation
T
C
=100°C
T
A
=25°C
T
A
=70°C
Copyright© Ruichips Semiconductor Co., Ltd
Rev. A– FEB., 2012
410
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①
A
A
120
97
30
①
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24
96
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4.2
2.7
W
③
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