RU30E30L
N-Channel Advanced Power MOSFET
MOSFET
Features
• 30V/30A,
R
DS (ON)
=16mΩ(tpy.)@V
=10V
R
DS (ON)
=26mΩ(tpy.)@V
=4.5V
•
Super High Dense Cell Design
•
ESD protected
•
Reliable and Rugged
•
100% avalanche tested
• Lead Free and Green Devices Available
(RoHS Compliant)
Pin Description
TO252
Applications
•
DC/DC Converter
•
Motor Drives
N-Channel MOSFET
Absolute Maximum Ratings
Symbol
Parameter
Rating
30
±16
175
-55 to 175
T
C
=25°C
20
①
Unit
Common Ratings
(T
C
=25°C Unless Otherwise Noted)
V
DSS
V
GSS
T
J
T
STG
I
S
I
DP
I
D
Drain-Source Voltage
Gate-Source Voltage
Maximum Junction Temperature
Storage Temperature Range
Diode Continuous Forward Current
V
°C
°C
A
Mounted on Large Heat Sink
300μs Pulse Drain Current Tested
Continuous Drain Current(V
GS
=10V)
T
C
=25°C
T
C
=25°C
T
C
=100°C
P
D
R
θJC
③
120
30
A
A
②
22
40
20
3.75
W
°C/W
Maximum Power Dissipation
Thermal Resistance-Junction to Case
T
C
=25°C
T
C
=100°C
Drain-Source Avalanche Ratings
E
AS
Avalanche Energy, Single Pulsed
50
mJ
Copyright© Ruichips Semiconductor Co., Ltd
Rev. A– FEB., 2012
www.ruichips.com
RUICHIPS [ RUICHIPS SEMICONDUCTOR CO., LTD ]
