RU30L15H
P-Channel Advanced Power MOSFET
MOSFET
Features
• -30V/-14.5A,
R
DS (ON)
=13
mΩ
(Type) @ V
GS
=-10V
R
DS (ON)
=22
mΩ
(Type) @ V
GS
=-4.5V
• Super High Dense Cell Design
•
Reliable and Rugged
•
ESD Protected
Pin Description
SOP-8
• Lead Free and Green Available
Applications
•
Load Switching.
•
PWM Applications.
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings
(T
A
=25°C Unless Otherwise Noted)
V
DSS
V
GSS
T
J
T
STG
I
S
I
DP
I
D
Drain-Source Voltage
Gate-Source Voltage
Maximum Junction Temperature
Storage Temperature Range
Diode Continuous Forward Current
P-Channel MOSFET
Rating
-30
±20
150
-55 to 150
T
C
=25°C
-14.5
①
Unit
V
°C
°C
A
Mounted on Large Heat Sink
300μs Pulse Drain Current Tested
Continuous Drain Current
T
C
=25°C
T
C
=25°C
T
C
=70°C
P
D
R
θJA
②
-58
A
A
-14.5
-11
3.1
2.0
40
Maximum Power Dissipation
Thermal Resistance-Junction to Ambient
T
C
=25°C
T
C
=70°C
W
°C/W
Copyright© Ruichips Semiconductor Co., Ltd
Rev. B– APR., 2011
www.ruichips.com
RUICHIPS [ RUICHIPS SEMICONDUCTOR CO., LTD ]
