RU55111R
N-Channel Advanced Power MOSFET
MOSFET
Features
• 55V/110A,
R
DS (ON)
=5mΩ(tpy.)@V
=10V
R
DS (ON)
=7mΩ(tpy.)@V
=4.5V
•
Super High Dense Cell Design
• Ultra Low On-Resistance
•
100% avalanche tested
• Lead Free and Green Devices Available
(RoHS Compliant)
Pin Description
TO-220
Applications
• DC-DC Converters and Off-line UPS
N-Channel MOSFET
Absolute Maximum Ratings
Symbol
Parameter
Rating
55
±20
175
-55 to 175
T
C
=25°C
110
①
Unit
Common Ratings
(T
C
=25°C Unless Otherwise Noted)
V
DSS
V
GSS
T
J
T
STG
I
S
Drain-Source Voltage
Gate-Source Voltage
Maximum Junction Temperature
Storage Temperature Range
Diode Continuous Forward Current
V
°C
°C
A
Mounted on Large Heat Sink
I
DP
I
D
300μs Pulse Drain Current Tested
Continuous Drain Current(V
GS
=10V)
T
C
=25°C
T
C
=25°C
T
C
=100°C
T
C
=25°C
T
C
=100°C
420
②
①
A
A
W
W
°C/W
110
P
D
R
θJC
③
88
176
88
①
Maximum Power Dissipation
Thermal Resistance-Junction to Case
0.85
Drain-Source Avalanche Ratings
E
AS
Avalanche Energy, Single Pulsed
506
mJ
Copyright© Ruichips Semiconductor Co., Ltd
Rev. A– MAR., 2012
www.ruichips.com
RUICHIPS [ RUICHIPS SEMICONDUCTOR CO., LTD ]
