RU6055S
N-Channel Advanced Power MOSFET
MOSFET
Features
• 60V/60A,
R
DS (ON)
=9
mΩ
(Type) @ V
GS
=10V,
I
DS
=30A
•
Ultra Low On-Resistance
•
Fast Switching
•
100% avalanche tested
•
175°C Operating Temperature
• Lead Free,RoHS compliant
Pin Description
TO-220
TO-220F
TO-263
TO-247
Applications
•
Switching Application Systems
N-Channel MOSFET
Absolute Maximum Ratings
Symbol
Parameter
Rating
60
±25
175
-55 to 175
T
C
=25°C
60
①
Unit
Common Ratings
(T
A
=25°C Unless Otherwise Noted)
V
DSS
V
GSS
T
J
T
STG
I
S
I
DP
I
D
Drain-Source Voltage
Gate-Source Voltage
Maximum Junction Temperature
Storage Temperature Range
Diode Continuous Forward Current
V
°C
°C
A
Mounted on Large Heat Sink
300μs Pulse Drain Current Tested
Continuous Drain Current
T
C
=25°C
T
C
=25°C
T
C
=100°C
P
D
R
θJC
③
240
60
A
A
②
Maximum Power Dissipation
Thermal Resistance-Junction to Case
T
C
=25°C
T
C
=100°C
46
111
56
②
W
°C/W
1.35
Drain-Source Avalanche Ratings
E
AS
Avalanche Energy, Single Pulsed
324
mJ
Copyright© Ruichips Semiconductor Co., Ltd
Rev. A– APR., 2011
www.ruichips.com