RU60E5H
N-Channel Advanced Power MOSFET
MOSFET
Features
• 60V/5A,
R
DS (ON)
=60
mΩ
(Typ.) @ V
GS
=10V
R
DS (ON)
=70
mΩ
(Typ.) @ V
GS
=4.5V
• Super High Dense Cell Design
•
Reliable and Rugged
• ESD Protected
Pin Description
SOP-8
• Lead Free and Green Available
Applications
•
Power Management
•
Switch Applications
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings
(T
A
=25°C Unless Otherwise Noted)
V
DSS
V
GSS
T
J
T
STG
I
S
I
DP
I
D
Drain-Source Voltage
Gate-Source Voltage
Maximum Junction Temperature
Storage Temperature Range
Diode Continuous Forward Current
N-Channel MOSFET
Rating
60
±20
150
-55 to 150
T
A
=25°C
3
①
Unit
V
°C
°C
A
Mounted on Large Heat Sink
300μs Pulse Drain Current Tested
Continuous Drain Current
T
A
=25°C
T
A
=25°C
T
A
=70°C
P
D
R
θJA
②
20
A
A
5
3.7
2.5
1.6
50
Maximum Power Dissipation
Thermal Resistance-Junction to Ambient
T
A
=25°C
T
A
=70°C
W
°C/W
Copyright© Ruichips Semiconductor Co., Ltd
Rev. A– JUL., 2011
www.ruichips.com
RUICHIPS [ RUICHIPS SEMICONDUCTOR CO., LTD ]
