RU60E5D
N-Channel Advanced Power MOSFET
MOSFET
Features
• 60V/5A,
R
DS (ON)
=
58mΩ
(Type)
@
V
GS
=10V
R
DS (ON)
=
70mΩ
(Type)
@
V
GS
=4.5V
•
ESD Protected
•
Reliable and Rugged
• Ultra Low On-Resistance
•
100% avalanche tested
• Lead Free and Green Available
Pin Description
SOT-223
Applications
•
Power Management
•
DC-DC Converter
•
Motor Control
N-Channel MOSFET
Absolute Maximum Ratings
Symbol
Parameter
Rating
60
±20
150
-55 to 150
T
C
=25°C
T
C
=25°C
T
C
=25°C
T
C
=70°C
T
C
=25°C
T
C
=70°C
5
20
5
4
①
Unit
Common Ratings
(T
A
=25°C Unless Otherwise Noted)
V
DSS
V
GSS
T
J
T
STG
I
S
Drain-Source Voltage
Gate-Source Voltage
Maximum Junction Temperature
Storage Temperature Range
Diode Continuous Forward Current
V
°C
°C
A
A
A
W
°C/W
Mounted on Large Heat Sink
I
DP
300μs Pulse Drain Current Tested
I
D
P
D
R
θJA
②
Continuous Drain Current
Maximum Power Dissipation
Thermal Resistance-Junction to Ambient
2.5
1.6
50
Copyright© Ruichips Semiconductor Co., Ltd
Rev. B – APR., 2011
www.ruichips.com
RUICHIPS [ RUICHIPS SEMICONDUCTOR CO., LTD ]
