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RU6888M 参数 Datasheet PDF下载

RU6888M图片预览
型号: RU6888M
PDF下载: 下载PDF文件 查看货源
内容描述: N沟道先进的功率MOSFET [N-Channel Advanced Power MOSFET]
分类和应用:
文件页数/大小: 9 页 / 295 K
品牌: RUICHIPS [ RUICHIPS SEMICONDUCTOR CO., LTD ]
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RU6888M
N-Channel Advanced Power MOSFET
MOSFET
Features
• 60V/62A,
R
DS (ON)
=7mΩ(tpy.)@V
=10V
Super High Dense Cell Design
Reliable and Rugged
100% avalanche tested
• Lead Free and Green Devices Available
(RoHS Compliant)
Pin Description
PDFN 5X6
Applications
Power Management.
N-Channel MOSFET
Absolute Maximum Ratings
Symbol
Parameter
Rating
60
±25
150
-55 to 150
T
C
=25°C
50
Unit
Common Ratings
(T
C
=25°C Unless Otherwise Noted)
V
DSS
V
GSS
T
J
T
STG
I
S
Drain-Source Voltage
Gate-Source Voltage
Maximum Junction Temperature
Storage Temperature Range
Diode Continuous Forward Current
V
°C
°C
A
Mounted on Large Heat Sink
I
DP
300μs Pulse Drain Current Tested
T
C
=25°C
T
C
=25°C
I
D
Continuous Drain Current(V
GS
=10V)
T
C
=100°C
T
A
=25°C
T
A
=70°C
T
C
=25°C
P
D
Maximum Power Dissipation
T
C
=100°C
T
A
=25°C
T
A
=70°C
Copyright© Ruichips Semiconductor Co., Ltd
Rev. A– DEC., 2011
240
A
A
62
40
16
13
62.5
25
4.2
2.7
W
www.ruichips.com