RU6H11R
N-Channel Advanced Power MOSFET
MOSFET
Features
•600V/10A,
R
DS (ON)
=
0.75Ω
(Typ.)
@
V
GS
=10V
•
Gate charge minimized
•
Low Crss( Typ. 12pF)
• Extremely high dv/dt capability
•
100% avalanche tested
• Lead Free and Green Available
Pin Description
TO-220
Applications
•
High efficiency switch mode power
supplies
•
Lighting
N-Channel MOSFET
Absolute Maximum Ratings
Symbol
Parameter
Rating
600
±30
150
-55 to 150
T
C
=25°C
T
C
=25°C
T
C
=25°C
T
C
=100°C
T
C
=25°C
T
C
=100°C
10
①
①
①
Unit
Common Ratings
(T
C
=25°C Unless Otherwise Noted)
V
DSS
V
GSS
T
J
T
STG
I
S
Drain-Source Voltage
Gate-Source Voltage
Maximum Junction Temperature
Storage Temperature Range
Diode Continuous Forward Current
V
°C
°C
A
A
A
Mounted on Large Heat Sink
I
DP
300μs Pulse Drain Current Tested
I
D
Continuous Drain Current
40
10
P
D
R
θJC
②
6.4
162
65
Maximum Power Dissipation
Thermal Resistance-Junction to Case
W
°C/W
0.77
Drain-Source Avalanche Ratings
E
AS
Avalanche Energy, Single Pulsed
6.2
mJ
Copyright© Ruichips Semiconductor Co., Ltd
Rev. A – JUL., 2012
www.ruichips.com
RUICHIPS [ RUICHIPS SEMICONDUCTOR CO., LTD ]
