RU6H10P
N-Channel Advanced Power MOSFET
MOSFET
Features
• 600V/10A,
R
DS (ON)
=
0.65Ω
(Type)
@
V
GS
=10V
•
Gate charge minimized
•
Low Crss( Typ. 15pF)
• Extremely high dv/dt capability
•
100% avalanche tested
• Lead Free and Green Available
Pin Description
TO-220
TO-220F
TO-263
TO-247
Applications
•
High efficiency switch mode power
supplies
•
Electronic lamp ballasts based on half
bridge
N-Channel MOSFET
Absolute Maximum Ratings
Symbol
Parameter
Rating
600
±30
150
-55 to 150
T
C
=25°C
T
C
=25°C
T
C
=25°C
T
C
=100°C
T
C
=25°C
T
C
=100°C
10
①
①
Unit
Common Ratings
(T
A
=25°C Unless Otherwise Noted)
V
DSS
V
GSS
T
J
T
STG
I
S
Drain-Source Voltage
Gate-Source Voltage
Maximum Junction Temperature
Storage Temperature Range
Diode Continuous Forward Current
V
°C
°C
A
A
A
W
°C/W
Mounted on Large Heat Sink
I
DP
300μs Pulse Drain Current Tested
I
D
P
D
R
θJC
②
40
10
Continuous Drain Current
Maximum Power Dissipation
Thermal Resistance-Junction to Case
7
35
14
①
3.6
Drain-Source Avalanche Ratings
E
AS
Avalanche Energy, Single Pulsed
450
mJ
Copyright© Ruichips Semiconductor Co., Ltd
Rev. B – JAN., 2011
www.ruichips.com