RUS1H20R
Power Schottky Barrier Diode
MOSFET
Features
•
V
RRM
=
Pin Description
100V
I
F(AV)
=2x 10A
•
Low Power Loss and High Efficiency
• High Surge Capability
• Low Leakage Current
•
Low Forward Voltage Drop
• Lead Free and Green Devices Available
TO-220
Applications
• Rectifiers in SMPS
• Free Wheeling Diode
• DC-DC Converters
Schottky Barrier Diode
Absolute Maximum Ratings
Symbol
Parameter
Rating
100
100
20
10
150
-55 to 150
150
V
A
A
A
°C
°C
Unit
Common Ratings
(T
C
=25°C Unless Otherwise Noted)
V
RRM
V
R
I
F(AV)
I
FSM
T
STG
T
J
Maximum Repetitive Reverse Voltage
Maximum DC Reverse Voltage
Average Rectified Forward Current, per Device
T
C
=130°C
per Diode
Peak Forward Surge Current,8.3mS Half Sine Wave
Storage Temperature Range
Operating Junction Temperature
Mounted on Large Heat Sink
R
θJC
Thermal Resistance-Junction to Case per Diode
1.5
°C/W
Copyright© Ruichips Semiconductor Co., Ltd
Rev. A– JUL., 2012
www.ruichips.com
RUICHIPS [ RUICHIPS SEMICONDUCTOR CO., LTD ]
