SDRAM 256Mb E-die (x4, x8, x16)
DC CHARACTERISTICS (x4, x8)
(Recommended operating condition unless otherwise noted, T
A
= 0 to 70°C)
Parameter
Operating current
(One bank active)
Precharge standby current in
power-down mode
Precharge standby current in
non power-down mode
Active standby current in
power-down mode
Active standby current in
non power-down mode
(One bank active)
Symbol
Burst length = 1
t
RC
≥
t
RC
(min)
I
O
= 0 mA
CKE
≤
V
IL
(max), t
CC
= 10ns
CKE
≥
V
IH
(min), CS
≥
V
IH
(min), t
CC
= 10ns
Input signals are changed one time during 20ns
Test Condition
CMOS SDRAM
Version
75
80
2
2
20
Unit
Note
I
CC1
I
CC2
P
mA
1
I
CC2
PS CKE & CLK
≤
V
IL
(max), t
CC
=
∞
I
CC2
N
mA
CKE
≥
V
IH
(min), CLK
≤
V
IL
(max), t
CC
=
∞
I
CC2
NS
Input signals are stable
I
CC3
P
CKE
≤
V
IL
(max), t
CC
= 10ns
CKE
≥
V
IH
(min), CS
≥
V
IH
(min), t
CC
= 10ns
Input signals are changed one time during 20ns
CKE
≥
V
IH
(min), CLK
≤
V
IL
(max), t
CC
=
∞
Input signals are stable
I
O
= 0 mA
Page burst
4banks Activated.
t
CCD
= 2CLKs
t
RC
≥
t
RC
(min)
CKE
≤
0.2V
C
L
I
CC3
PS CKE & CLK
≤
V
IL
(max), t
CC
=
∞
I
CC3
N
I
CC3
NS
mA
10
6
6
25
25
mA
mA
mA
Operating current
(Burst mode)
Refresh current
Self refresh current
I
CC4
100
mA
1
I
CC5
I
CC6
180
3
1.5
mA
mA
mA
2
3
4
Notes :
1. Measured with outputs open.
2. Refresh period is 64ms.
3. K4S5604(08)32E-TC
4. K4S5604(08)32E-TL
5. Unless otherwise noticed, input swing level is CMOS(V
IH
/V
IL
=V
DDQ
/V
SSQ
).
Rev. 1.5 May 2004
SAMSUNG [ SAMSUNG SEMICONDUCTOR ]
