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K6F1616U6A-EF70 参数 Datasheet PDF下载

K6F1616U6A-EF70图片预览
型号: K6F1616U6A-EF70
PDF下载: 下载PDF文件 查看货源
内容描述: 1M X16位超低功耗和低电压全CMOS静态RAM [1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM]
分类和应用: 存储内存集成电路静态存储器
文件页数/大小: 9 页 / 160 K
品牌: SAMSUNG [ SAMSUNG SEMICONDUCTOR ]
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K6F1616U6A Family
Document Title
1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
CMOS SRAM
Revision History
Revision No. History
0.0
1.0
Initial draft
Finalize
- added 45ns product
- changed ICC1 : 3mA to 2mA
- changed ICC2 : 38mA to 30mA for 55ns product
30mA to 25mA for 70ns product
Revise
- Deleted 45ns product
Draft Date
September 11, 2001
January 4, 2002
Remark
Preliminary
Final
1.1
September 11, 2002
Final
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and
products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.
1
Revision 1.1
September 2002