K6R1004V1D
Document Title
64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating)
Operated at Commercial and Industrial Temperature Ranges.
PRELIMINARY
PRELIMINARY
for AT&T
CMOS SRAM
Revision History
Rev. No.
Rev. 0.0
Rev. 0.1
Rev. 0.2
Rev. 1.0
History
Initial document.
Speed bin modify
Current modify
1. Final datasheet release
2. Delete 12ns speed bin.
3. Change Icc for Industrial mode.
Item
Previous
8ns
100mA
I
CC(Industrial)
10ns
85mA
1. Delete UB,LB releated timing diagram.
1. Add the Lead Free Package type.
Draft Data
May. 11. 2001
June. 18. 2001
September. 9. 2001
December. 18. 2001
Current
90mA
75mA
June. 19. 2002
July. 26, 2004
Final
Final
Remark
Preliminary
Preliminary
Preliminary
Final
Rev. 2.0
Rev. 3.0
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-
tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.
-1-
Rev. 3.0
July 2004
SAMSUNG [ SAMSUNG SEMICONDUCTOR ]
