K6R4016C1D-JC10 参数 Datasheet PDF下载

PRELIMPreliminaryPPPPPPPPPINARY

K6R4016C1D

Document Title

256Kx16 Bit High Speed Static RAM(5.0V Operating).

Operated at Commercial and Industrial Temperature Ranges.

CMOS SRAM

Revision History

Rev No.

Rev. 0.0

Rev. 0.1

Rev. 0.2

History

Initial release with Preliminary.

Package dimension modify on page 11.

Change Icc, Isb and Isb1

Item

I

CC(Commercial)

10ns

12ns

15ns

10ns

12ns

15ns

Previous

90mA

80mA

70mA

115mA

100mA

85mA

30mA

10mA

Current

65mA

55mA

45mA

85mA

75mA

65mA

20mA

5mA

Draft Data

September. 7. 2001

Septermber.28. 2001

November, 3, 2001

Remark

Preliminary

Preliminary

Preliminary

I

CC(Industrial)

I

SB

I

SB1(Normal)

Rev. 0.3

1. Correct AC parameters : Read & Write Cycle

2. Corrrect Power part : Delete "P-Industrial,Low Power" part

3. Delete Data Retention Characteristics

1. Delete 15ns speed bin.

2. Change Icc for Industrial mode.

Item

10ns

I

CC(Industrial)

12ns

1. Final datasheet release.

2. Delete 12ns speed bin.

1. Add the Lead Free Package type.

November, 23, 2001

Preliminary

Rev. 0.4

December, 18, 2001

Previous

85mA

75mA

Current

75mA

65mA

July, 09, 2002

Preliminary

Rev. 1.0

Final

Rev. 2.0

June. 20, 2003

Final

The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to c

hange the

specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-

tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.

-1-

Rev 2.0

June 2003