K6R4004C1D
Document Title
1Mx4 Bit High Speed Static RAM(5.0V Operating).
Operated at Commercial and Industrial Temperature Ranges.
PRELIMINARY
CMOS SRAM
Revision History
Rev No.
Rev. 0.0
Rev. 0.1
History
Initial release with Preliminary.
Change Icc. Isb and Isb1
Item
I
CC(Commercial)
10ns
12ns
15ns
10ns
12ns
15ns
Previous
90mA
80mA
70mA
115mA
100mA
85mA
30mA
10mA
Current
65mA
55mA
45mA
85mA
75mA
65mA
20mA
5mA
Draft Data
September. 7. 2001
November, 3. 2001
Remark
Preliminary
Preliminary
I
CC(Industrial)
I
SB
I
SB1
Rev. 0.2
1. Correct AC parameters : Read & Write Cycle mA
2. Delete Low Ver.
3. Delete Data Retention Characteristics
1. Delete 15ns speed bin.
2. Change Icc for Industrial mode.
Item
10ns
I
CC(Industrial)
12ns
November, 3. 2001
Preliminary
Rev. 0.3
Previous
85mA
75mA
Current
75mA
65mA
December, 18. 2001
Preliminary
Rev. 1.0
1. Final datasheet release.
2. Delete 12ns speed bin.
3. Delete UB,LB releated AC characteristics and timing diagram.
4. Correct Read Cycle time waveform(2).
1. Add the Lead Free Package type.
July, 09, 2002
Final
Rev. 2.0
July. 26, 2004
Final
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-
tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.
-1-
Rev. 2.0
July 2004
SAMSUNG [ SAMSUNG SEMICONDUCTOR ]
