K6T0808C1D Family
Document Title
32Kx8 bit Low Power CMOS Static RAM
CMOS SRAM
Revision History
Revision No History
0.0
0.1
Initial draft
First revision
-
K
M62256DL/DLI I
SB1
= 100
→
50µA
KM62256DL-L I
SB1
= 20
→
10µA
KM62256DLI-L I
SB1
= 50
→
15µA
- C
IN
= 6
→
8pF, C
IO
= 8
→
10pF
- KM62256D-4/5/7 Family
tOH = 5
→
10ns
- KM62256DL/DLI I
DR
= 50→30µA
KM62256DL-L/DLI-L I
DR
= 30
→
15µA
Finalize
- Remove I
CC
write value
- Improved operating current
I
CC2
= 70
→
60mA
- Improved standby current
KM62256DL/DLI I
SB1
= 50
→
30µA
KM62256DL-L I
SB1
= 10
→
5µA
KM62256DLI-L I
SB1
= 15
→
5µA
- Improved data retention current
KM62256DL/DLI I
DR
= 30
→
5µA
KM62256DL-L/DLI-L I
DR
= 15
→
3µA
- Remove 45ns part from commercial product and 100ns part
from industrial product.
Replace test load 100pF to 50pF for 55ns part
Draft Data
May 18, 1997
April 1, 1997
Remark
Design target
Preliminily
1.0
November 11, 1997
Final
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserves the right to change the specifications and
products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.
Revision 1.0
November 1997
SAMSUNG [ SAMSUNG SEMICONDUCTOR ]
