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K6T1008C2E-DB55 参数 Datasheet PDF下载

K6T1008C2E-DB55图片预览
型号: K6T1008C2E-DB55
PDF下载: 下载PDF文件 查看货源
内容描述: 128Kx8位低功耗CMOS静态RAM [128Kx8 bit Low Power CMOS Static RAM]
分类和应用: 存储内存集成电路静态存储器光电二极管
文件页数/大小: 10 页 / 192 K
品牌: SAMSUNG [ SAMSUNG SEMICONDUCTOR ]
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K6T1008C2E Family
Document Title
128Kx8 bit Low Power CMOS Static RAM
CMOS SRAM
Revision History
Revision No.
0.0
1.0
History
Design target
Finalize
- Improve t
WP
form 55ns to 50ns for 70ns product.
- Remove 55ns speed bin from industrial product.
Errata correction
Revise
Revise
- Add 55ns parts to industrial products.
Draft Data
October 12, 1998
August 30, 1999
Remark
Preliminary
Final
1.01
2.0
3.0
December 1, 1999
February 14, 2000
March 3, 2000
Final
Final
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserves the right to change the specifications and
products. SAMSUNG Electronics will answer to your questions. If you have any questions, please contact the SAMSUNG branch offices.
1
Revision 3.0
March 2000