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K6T2008U2A-YF70 参数 Datasheet PDF下载

K6T2008U2A-YF70图片预览
型号: K6T2008U2A-YF70
PDF下载: 下载PDF文件 查看货源
内容描述: 256Kx8位低功耗和低电压CMOS静态RAM [256Kx8 bit Low Power and Low Voltage CMOS Static RAM]
分类和应用:
文件页数/大小: 10 页 / 194 K
品牌: SAMSUNG [ SAMSUNG SEMICONDUCTOR ]
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K6T2008V2A, K6T2008U2A Family
256Kx8 bit Low Power and Low Voltage CMOS Static RAM
FEATURES
Process Technology: TFT
Organization: 256Kx8
Power Supply Voltage
K6T2008V2A Family: 3.0V~3.6V
K6T2008U2A Family: 2.7V~3.3V
Low Data Retention Voltage: 2V(Min)
Three State Outputs
Package Type: 32-TSOP1-0820F, 32-TSOP1-0813.4F
48-FBGA-6.00x7.00
CMOS SRAM
GENERAL DESCRIPTION
The K6T2008V2A and K6T2008U2A families are fabricated by
SAMSUNG′s advanced CMOS process technology. The fam-
ily support various operating temperature ranges and have
various package types for user flexibility of system design. The
family also support low data retention voltage for battery back-
up operation with low data retention current.
PRODUCT FAMILY
Power Dissipation
Product Family
Operating Temperature Vcc Range
Speed
Standby
(I
SB1
, Max)
10µA
30mA
15µA
2)
Operating
(I
CC2,
Max)
PKG Type
K6T2008V2A-B
K6T2008U2A-B
K6T2008V2A-F
K6T2008U2A-F
Commercial(0~70°C)
3.0~3.6V
2.7~3.3V
70/85ns
70
1)
/85/100ns
70
1)
/85/100ns
Industrial(-40~85°C)
3.0~3.6V
2.7~3.3V
32-TSOP1-0820F
32-TSOP1-0813.4F
48-FBGA-6.00x7.00
1. The parameters are tested with 30pF test load
2. K6T2008V2A Family = 35mA
PIN DESCRIPTION
1
A11
A9
A8
A13
WE
CS2
A15
V
CC
A17
A16
A14
A12
A7
A6
A5
A4
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
OE
A10
CS1
I/O8
I/O7
I/O6
I/O5
I/O4
V
SS
I/O3
I/O2
I/O1
A0
A1
A2
A3
2
3
4
5
6
A
A0
A1
CS2
A3
A6
A8
FUNCTIONAL BLOCK DIAGRAM
Clk gen.
Precharge circuit.
B
I/O5
A2
WE
A4
A7
I/O1
A16
A15
32-TSOP1
32-sTSOP1
Type - Forward
C
I/O6
NC
A5
I/O2
A14
A13
D
Vss
Vcc
A12
A11
A10
Row
select
Memory array
1024 rows
256×8 columns
E
Vcc
Vss
F
I/O7
NC
A17
I/O3
A9
A8
G
I/O8
OE
CS1
A16
A15
I/O4
A7
H
A9
A10
A11
A12
A13
A14
I/O
1
48-FBGA: Top View (Ball Down)
I/O
8
Data
cont
I/O Circuit
Column select
Name
Function
Name
Function
Data
cont
CS
1
,CS
2
Chip Select Inputs
OE
WE
A
0
~A
17
Output Enable Input
Write Enable Input
Address Inputs
I/O
1
~I/O
8
Data Inputs/Outputs
Vcc
Vss
NC
Power
Ground
No Connection
CS
1
CS
2
WE
OE
A0
A1 A17 A6 A5 A4 A3
A2
Control
logic
SAMSUNG ELECTRONICS CO., LTD.
reserves the right to change products and specifications without notice.
Revision 2.01
October 2001