K6T2008V2A, K6T2008U2A Family
RECOMMENDED DC OPERATING CONDITIONS
1)
Item
Supply voltage
Ground
Input high voltage
Input low voltage
Symbol
Vcc
Vss
V
IH
V
IL
Product
K6T2008V2A Family
K6T2008U2A Family
All Family
K6T2008V2A, K6T2008U2A Family
K6T2008V2A, K6T2008U2A Family
Min
3.0
2.7
0
2.2
-0.3
3)
CMOS SRAM
Typ
3.3
3.0
0
-
-
Max
3.6
3.3
0
Vcc+0.3
0.6
Unit
V
V
V
V
Note:
1. Commercial Product: T
A
=0 to 70°C, otherwise specified
Industrial Produc t: T
A
=-40 to 85°C, otherwise specified
2. Overshoot: Vcc+2.0V in case of pulse width≤30ns
3. Undershoot: -2.0V in case of pulse width≤30ns
4. Overshoot and undershoot are sampled, not 100% tested.
CAPACITANCE
1)
(f=1MHz, T
A
=25°C)
Item
Input capacitance
Input/Output capacitance
1. Capacitance is sampled, not 100% tested
Symbol
C
IN
C
IO
Test Condition
V
IN
=0V
V
IO
=0V
Min
-
-
Max
8
10
Unit
pF
pF
DC AND OPERATING CHARACTERISTICS
Item
Input leakage current
Output leakage current
Operating power supply current
Average operating current
Symbol
I
LI
I
LO
I
CC
I
CC1
I
CC2
Output low voltage
Output high voltage
Standby Current(TTL)
Standby Current(CMOS)
1. K6T2008V2A Family = 35mA
2. Industrial product = 15µA
Test Conditions
V
IN
=Vss to Vcc
CS
1
=V
IH
or CS
2
=V
IL
or OE=V
IH
or WE=V
IL
, V
IO
=Vss to Vcc
I
IO
=0mA, CS
1
=V
IL
, CS
2
=V
IH,
V
IN
=V
IH
or V
IL
Cycle time=1µs, 100%duty, I
IO
=0mA, CS
1
≤0.2V,
CS
2
≥Vcc-0.2V,
V
IN
≤0.2V
or V
IN
≥V
CC
-0.2V
Cycle time=Min, 100% duty, I
IO
=0mA, CS
1
=V
IL
, CS
2
=V
IH,
V
IN
=V
IH
or V
IL
Min Typ Max Unit
-1
-1
-
-
-
-
2.4
-
-
-
-
-
-
25
-
-
-
0.2
1
1
5
4
30
1)
0.4
-
0.3
10
2)
µA
µA
mA
mA
mA
V
V
mA
µA
V
OL
V
OH
I
SB
I
SB1
I
OL
=2.1mA
I
OH
=-1.0mA
CS
1
=V
IH
, CS
2
=V
IL
, Other inputs = V
IH
or V
IL
CS
1
≥Vcc-0.2V,
CS
2
≥Vcc-0.2V
or CS
2
≤0.2V,
Other inputs=0~Vcc
Revision 2.01
October 2001
SAMSUNG [ SAMSUNG SEMICONDUCTOR ]
