CMOS SRAM
K6T4008C1B Family
RECOMMENDED DC OPERATING CONDITIONS1)
Item
Symbol
Vcc
Min
4.5
0
Typ
Max
Unit
V
Supply voltage
Ground
5.0
5.5
0
Vss
0
-
V
Vcc+0.52)
0.8
Input high voltage
Input low voltage
VIH
2.2
V
-0.53)
VIL
-
V
Note:
1. Commercial Product: TA=0 to 70°C, otherwise specified
Industrial Product: TA=-40 to 85°C, otherwise specified
2. Overshoot: VCC+3.0V in case of pulse width £ 30ns
3. Undershoot: -3.0V in case of pulse width £ 30ns
4. Overshoot and undershoot are sampled, not 100% tested.
CAPACITANCE1) (f=1MHz, TA=25°C)
Item
Input capacitance
Symbol
CIN
Test Condition
VIN=0V
Min
Max
8
Unit
pF
-
-
Input/Output capacitance
CIO
VIO=0V
10
pF
1. Capacitance is sampled, not 100% tested
DC AND OPERATING CHARACTERISTICS
Item
Symbol
ILI
Test Conditions
Min
-1
-1
-
Typ Max Unit
Input leakage current
Output leakage current
Operating power supply
VIN=Vss to Vcc
-
-
1
1
mA
mA
ILO
CS=VIH or OE=VIH or WE=VIL, VIO=Vss to Vcc
IIO=0mA, CS=VIL, VIN=VIL or VIH, Read
ICC
7.5
4
15
10
40
80
0.4
-
mA
Read
Write
-
Cycle time=1ms, 100% duty, IIO=0mA
CS£0.2V, VIN³ 0.2V or VIN ³ Vcc-0.2V
ICC1
mA
Average operating current
-
27
65
-
ICC2
VOL
VOH
ISB
Cycle time=Min, 100% duty, IIO=0mA, CS=VIL, VIN=VIH or VIL
-
mA
V
Output low voltage
Output high voltage
Standby Current(TTL)
IOL=2.1mA
-
IOH=-1.0mA
2.4
-
V
CS=VIH, Other inputs = VIL or VIH
K6T4008C1B-L
-
-
-
-
-
-
3
mA
mA
mA
mA
mA
2
100
20
100
50
K6T4008C1B-B
1
Standby Current(CMOS)
ISB1
CS³ Vcc-0.2V, Other inputs=0~Vcc
K6T4008C1B-P
K6T4008C1B-F
2
1
Revision 3.0
September 1998
4
SAMSUNG [ SAMSUNG ]
