K6T4008V1C, K6T4008U1C Family
Document Title
512Kx8 bit Low Power and Low Voltage CMOS Static RAM
CMOS SRAM
Revision History
Revision No. History
0.0
0.1
Initial Draft
Revisied
- Speed bin change
KM68U4000C : 85/100ns
→
70/85/100ns
- DC Characteristics change
I
CC
: 5mA at read/write
→
4mA at read
I
CC1
: 3mA
→
4mA
I
CC2
: 35mA
→
30mA
I
SB
: 0.5mA
→
0.3mA
I
SB1
: 10µA
→
15µA for commercial parts
- Add 32-TSOP1-0820
Errata correct
- 32-TSOP1-0813 products: T
→
TG
Finalize
Draft Data
January 13, 1998
June 12, 1998
Remark
Advance
Preliminary
0.11
November 7, 1998
1.0
January 15, 1999
Final
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and
products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.
1
Revision 1.0
January 1999
SAMSUNG [ SAMSUNG SEMICONDUCTOR ]
