K6T4016V3C, K6T4016U3C Family
Document Title
256Kx16 bit Low Power and Low Voltage CMOS Static RAM
CMOS SRAM
Revision History
Revision No
0.0
0.1
History
Initial draft
Revise
- Speed bin change
Commercial: 70/85ns to 70/85/100ns
Industrial: 85/100ns to 70/85/100ns
- DC Characteristics change
I
CC
: 5mA at read/write to 4mA at read
I
CC1
: 5mA to 6mA
I
CC2
: 50mA to 45mA
I
SB
: 0.5mA to 0.3mA
I
SB1
: 10µA to 15µA for commercial parts
Errata correction
Finalize
Revise
- Add K6T4016V3C-TB55 product
Revise
- Improved V
OH
(output high voltage) from 2.2V to 2.4V.
Draft Date
January 13, 1998
June 12, 1998
Remark
Advance
Preliminary
0.11
1.0
2.0
August 13, 1998
November 16, 1998
June 26, 2001
Final
Final
2.01
October 15, 2001
Final
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and
products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.
1
Revision 2.01
October 2001
SAMSUNG [ SAMSUNG SEMICONDUCTOR ]
