K6T4008C1B Family
Document Title
512Kx8 bit Low Power CMOS Static RAM
CMOS SRAM
Revision History
Revision No.
0.0
0.1
History
Initial Draft
Revise
- Changed Operating current by reticle revision
I
CC
at write : 35mA
→
45mA
I
CC1
at read/write : 15/35mA
→
10/45mA
Finalize
- Changed Operating current
I
CC1
at write : 45mA
→
40mA
I
CC
2; 90mA
→
80mA
- Change test load at 55ns : 100pF
→
50pF
Revise
- Change datasheet format
Revise
- Industrial product speed bin change:70/100ns
→
55/70ns
Draft Date
December 7, 1996
March 6, 1997
Remark
Advance
Preliminary
1.0
October 9, 1997
Final
2.0
February 17, 1998
Final
3.0
September 8, 1998
Final
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and
products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.
1
Revision 3.0
September 1998