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K6T4008C1B-GB70 参数 Datasheet PDF下载

K6T4008C1B-GB70图片预览
型号: K6T4008C1B-GB70
PDF下载: 下载PDF文件 查看货源
内容描述: 512Kx8位低功耗CMOS静态RAM [512Kx8 bit Low Power CMOS Static RAM]
分类和应用: 存储内存集成电路静态存储器光电二极管
文件页数/大小: 9 页 / 173 K
品牌: SAMSUNG [ SAMSUNG SEMICONDUCTOR ]
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K6T4008C1B Family
Document Title
512Kx8 bit Low Power CMOS Static RAM
CMOS SRAM
Revision History
Revision No.
0.0
0.1
History
Initial Draft
Revise
- Changed Operating current by reticle revision
I
CC
at write : 35mA
45mA
I
CC1
at read/write : 15/35mA
10/45mA
Finalize
- Changed Operating current
I
CC1
at write : 45mA
40mA
I
CC
2; 90mA
80mA
- Change test load at 55ns : 100pF
50pF
Revise
- Change datasheet format
Revise
- Industrial product speed bin change:70/100ns
55/70ns
Draft Date
December 7, 1996
March 6, 1997
Remark
Advance
Preliminary
1.0
October 9, 1997
Final
2.0
February 17, 1998
Final
3.0
September 8, 1998
Final
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and
products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.
1
Revision 3.0
September 1998