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K6X1008T2D-BF70 参数 Datasheet PDF下载

K6X1008T2D-BF70图片预览
型号: K6X1008T2D-BF70
PDF下载: 下载PDF文件 查看货源
内容描述: 128Kx8位低功耗CMOS静态RAM [128Kx8 bit Low Power CMOS Static RAM]
分类和应用: 存储内存集成电路静态存储器光电二极管
文件页数/大小: 9 页 / 155 K
品牌: SAMSUNG [ SAMSUNG SEMICONDUCTOR ]
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K6X1008T2D Family
Document Title
128Kx8 bit Low Power CMOS Static RAM
CMOS SRAM
Revision History
Revision No.
0.0
History
Initial draft
Draft Data
July 15, 2002
Remark
Preliminary
0.1
Revised
- Deleted 32-TSOP1-0820R, 32-TSOP1-0813.4F/R Package Type.
- Added Commercial product.
- Added 55ns product( Vcc = 3.0V~3.6V)
Revised
- Added Lead Free 32-SOP-525 Product
- Added Lead Free 32-TSOP1-0820F Product
Finalized
- Changed I
CC
from 3mA to 2mA
- Changed I
CC
2 from 25mA to 20mA
- Changed I
SB
1
(Commercial)
from 10µA to 6µA
- Changed I
SB
1
(industrial)
from 10µA to 6µA
- Changed I
SB
1
(Automotive)
from 20µA to 10µA
- Changed I
DR
(Commercial)
from 10µA to 6µA
- Changed I
DR
(industrial)
from 10µA to 6µA
- Changed I
DR
(Automotive)
from 20µA to 10µA
December 4, 2002
Preliminary
0.2
June 23, 2003
Preliminary
1.0
September 16, 2003
Final
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserves the right to change the specifications and
products. SAMSUNG Electronics will answer to your questions. If you have any questions, please contact the SAMSUNG branch offices.
1
Revision 1.0
September 2003