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K6X4008T1F-YF70 参数 Datasheet PDF下载

K6X4008T1F-YF70图片预览
型号: K6X4008T1F-YF70
PDF下载: 下载PDF文件 查看货源
内容描述: 512Kx8位低功耗和低电压CMOS静态RAM [512Kx8 bit Low Power and Low Voltage CMOS Static RAM]
分类和应用: 存储内存集成电路静态存储器光电二极管
文件页数/大小: 9 页 / 176 K
品牌: SAMSUNG [ SAMSUNG SEMICONDUCTOR ]
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K6X4008T1F Family
Document Title
512Kx8 bit Low Power and Low Voltage CMOS Static RAM
CMOS SRAM
Revision History
Revision No. History
0.0
0.1
Initial Draft
Revised
- Added 55ns product( Vcc = 3.0V~3.6V)
Revised
- Added Commercial product
Revised
- Errata correction : corrected commercial product family name from
K6X4008T1F-F to K6X4008T1F-B in PRODUCT FAMILY.
Finalized
- Changed I
CC
from 4mA to 2mA
- Changed I
CC
1 from 4mA to 3mA
- Changed I
CC
2 from 30mA to 25mA
- Changed I
SB
1
(Commercial)
from 15µA to 10µA
- Changed I
SB
1
(industrial)
from 20µA to 10µA
- Changed I
SB
1
(Automotive)
from 30µA to 20µA
- Changed I
DR
(Commercial)
from 15µA to 10µA
- Changed I
DR
(industrial)
from 20µA to 10µA
- Changed I
DR
(Automotive)
from 30µA to 20µA
Draft Data
July 29, 2002
October 14, 2002
Remark
Preliminary
Preliminary
0.2
December 2, 2002
Preliminary
0.21
March 26, 2003
Preliminary
1.0
September 16, 2003
Final
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and
products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.
1
Revision 1.0
September 2003