K6X4016T3F Family
Document Title
256Kx16 bit Low Power and Low Voltage CMOS Static RAM
CMOS SRAM
Revision History
Revision No
0.0
0.1
History
Initial draft
Revised
- Added Commercial product
- Deleted
44-TSOP2-400R Package Type.
- Added 55ns product(@ 3.0V~3.6V)
Finalized
Revised
- Changed I
CC
(Operating power supply current) from 4mA to 2mA
- Changed I
CC
1(Average operating current) from 4mA to 3mA
- Changed I
CC
2(Average operating current) from 40mA to 25mA
- Changed I
SB
1(Standby Current(CMOS), Commercial)
from 15µA to 10µA
- Changed I
SB
1(Standby Current(CMOS), Industrial)
from 20µA to 10µA
- Changed I
SB
1(Standby Current(CMOS), Automotive)
from 30µA to 20µA
- Changed I
DR
(Data retention current, Commercial)
from 15µA to 10µA
- Changed I
DR
(Data retention current, Industrial)
from 20µA to 10µA
- Changed I
DR
(Data retention current, Automotive)
from 30µA to 20µA
Draft Date
July 29, 2002
December 2, 2002
Remark
Preliminary
Preliminary
1.0
August 8, 2003
Final
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and
products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.
1
Revision 1.0
August 2003
SAMSUNG [ SAMSUNG SEMICONDUCTOR ]
