K7A803609B
K7A801809B
PARAMETER
Input Leakage Current(except ZZ)
Output Leakage Current
Operating Current
SYMBOL
I
IL
I
OL
I
CC
256Kx36 & 512Kx18 Synchronous SRAM
DC ELECTRICAL CHARACTERISTICS
(V
DD
=3.3V+0.165V/-0.165V, T
A
=0°C to +70°C)
TEST CONDITIONS
V
DD
= Max ; V
IN
=V
SS
to V
DD
Output Disabled, V
OUT
=V
SS
to V
DDQ
Device Selected, I
OUT
=0mA,
ZZ≤V
IL ,
Cycle Time
≥
t
CYC
Min
Device deselected, I
OUT
=0mA,
I
SB
Standby Current
ZZ≤V
IL
, f=Max,
All Inputs≤0.2V or
≥
V
DD
-0.2V
I
SB1
I
SB2
Output Low Voltage(3.3V I/O)
Output High Voltage(3.3V I/O)
Output Low Voltage(2.5V I/O)
Output High Voltage(2.5V I/O)
Input Low Voltage(3.3V I/O)
Input High Voltage(3.3V I/O)
Input Low Voltage(2.5V I/O)
Input High Voltage(2.5V I/O)
V
OL
V
OH
V
OL
V
OH
V
IL
V
IH
V
IL
V
IH
Device deselected, I
OUT
=0mA, ZZ≤0.2V,
f = 0, All Inputs=fixed (V
DD
-0.2V or 0.2V)
Device deselected, I
OUT
=0mA, ZZ≥V
DD
-0.2V,
f=Max, All Inputs≤V
IL
or
≥V
IH
I
OL
=8.0mA
I
OH
=-4.0mA
I
OL
=1.0mA
I
OH
=-1.0mA
-
-
-
2.4
-
2.0
-0.3*
2.0
-0.3*
1.7
100
60
0.4
-
0.4
-
0.8
V
DD
+0.3
0.7
V
DD
+0.3
mA
mA
V
V
V
V
V
V
V
V
3
3
-25
-
170
mA
-25
MIN
-2
-2
-
MAX
+2
+2
470
UNIT NOTES
µA
µA
mA
1,2
Notes :
The above parameters are also guaranteed at industrial temperature range.
1. Reference AC Operating Conditions and Characteristics for input and timing.
2. Data states are all zero.
3. In Case of I/O Pins, the Max. V
IH
=V
DDQ
+0.3V.
V
IH
V
SS
V
SS-
1.0V
20% t
CYC
(MIN)
TEST CONDITIONS
(V
DD
=3.3V+0.165V/-0.165V,V
DDQ
=3.3V+0.165/-0.165V or V
DD
=3.3V+0.165V/-0.165V,V
DDQ
=2.5V+0.4V/-0.125V, T
A
=0to70°C)
Parameter
Input Pulse Level(for 3.3V I/O)
Input Pulse Level(for 2.5V I/O)
Input Rise and Fall Time(Measured at 20% to 80% for 3.3V I/O)
Input Rise and Fall Time(Measured at 20% to 80% for 2.5V I/O)
Input and Output Timing Reference Levels for 3.3V I/O
Input and Output Timing Reference Levels for 2.5V I/O
Output Load
* The above parameters are also guaranteed at industrial temperature range.
Value
0 to 3.0V
0 to 2.5V
1.0V/ns
1.0V/ns
1.5V
V
DDQ
/2
See Fig. 1
-9-
Nov. 2003
Rev 3.0
SAMSUNG [ SAMSUNG SEMICONDUCTOR ]
