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K7B801825B-QC65 参数 Datasheet PDF下载

K7B801825B-QC65图片预览
型号: K7B801825B-QC65
PDF下载: 下载PDF文件 查看货源
内容描述: 256Kx36和512Kx18位同步流水线突发SRAM [256Kx36 & 512Kx18-Bit Synchronous Pipelined Burst SRAM]
分类和应用: 存储内存集成电路静态存储器时钟
文件页数/大小: 18 页 / 401 K
品牌: SAMSUNG [ SAMSUNG SEMICONDUCTOR ]
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K7A803609B
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Document Title
256Kx36 & 512Kx18 Synchronous SRAM
256Kx36 & 512Kx18-Bit Synchronous Pipelined Burst SRAM
Revision History
Rev. No.
0.0
0.1
0.2
0.3
1.0
History
Initial draft
1. Delete pass- through
1. Add x32 org part and industrial temperature part
1. change scan order(1) form 4T to 6T at 119BGA(x18)
1. Final spec release
2. Change I
SB2
form 50mA to 60mA
Remove tCYC 225MHz(-22)
1. Delete 119BGA package
1. Remove x32 organization
2. Remove -20 speed bin
Draft Date
May. 18 . 2001
June. 26. 2001
Aug. 11. 2001
Aug. 28. 2001
Nov. 16. 2001
Remark
Preliminary
Preliminary
Preliminary
Preliminary
Final
2.0
2.1
3.0
April. 01. 2002
April. 04. 2003
Nov. 17. 2003
Final
Final
Final
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-
tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.
-1-
Nov. 2003
Rev 3.0