K9F4008W0A-TCB0, K9F4008W0A-TIB0
Document Title
512K x 8 bit NAND Flash Memory
FLASH MEMORY
Revision History
Revision No. History
0.0
1.0
1.1
Initial issue.
1. Changed Operating Voltage 2.7V ~ 5.5V
→
3.0V ~ 5.5V
Data Sheet 1999
1. Added CE don’ care mode during the data-loading and reading
t
1. Changed device name
- KM29W040AT -> K9F4008W0A-TCB0
- KM29W040AIT -> K9F4008W0A-TIB0
1.Powerup sequence is added
: Recovery time of minimum 1µs is required before internal circuit gets
ready for any command sequences
~ 2.5V
Draft Date
April 10th 1998
July 14th 1998
April 10th 1999
Remark
Preliminary
1.2
Sep. 15th 1999
1.3
Jul. 23th 2001
≈
~ 2.5V
V
CC
High
WP
WE
2. AC parameter tCLR(CLE to RE Delay, min 50ns) is added.
3. AC parameter tAR is devided into tAR1, tAR2
ALE to RE Delay
t
AR
250
(before revision)
-
ns
≈
1µ
≈
(after revision)
ALE to RE Delay(ID Delay)
ALE to RE Delay(Read Cycle)
t
AR1
t
AR2
20
250
-
-
ns
ns
Note : For more detailed features and specifications including FAQ, please refer to Samsung’ Flash web site.
s
http://www.intl.samsungsemi.com/Memory/Flash/datasheets.html
The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right
to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you have
any questions, please contact the SAMSUNG branch office near you.
1
SAMSUNG [ SAMSUNG SEMICONDUCTOR ]
