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K9F5608U0C-PCB0 参数 Datasheet PDF下载

K9F5608U0C-PCB0图片预览
型号: K9F5608U0C-PCB0
PDF下载: 下载PDF文件 查看货源
内容描述: 512MB / 256MB 1.8V NAND闪存勘误表 [512Mb/256Mb 1.8V NAND Flash Errata]
分类和应用: 闪存存储内存集成电路光电二极管
文件页数/大小: 39 页 / 654 K
品牌: SAMSUNG [ SAMSUNG SEMICONDUCTOR ]
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ELECTRONICS
March. 2003
San 16 Banwol-Ri
Taean-Eup Hwasung- City
Kyungki Do, Korea
Tel.) 82 - 31 - 208 - 6463
Fax.) 82 - 31 -208 - 6799
512Mb/256Mb 1.8V NAND Flash Errata
Description : Some of AC characteristics are not meeting the specification
.
> AC characteristics : Refer to Table
Affected Products : K9F1208Q0A-XXB0, K9F1216Q0A-XXB0
K9F5608Q0C-XXB0, K9F5616Q0C-XXB0
K9K1208Q0C-XXB0, K9K1216Q0C-XXB0
Improvement schedule : The components without this restriction will
be available from work week 23 or after.
Workaround : Relax the relevant timing parameters according to the table.
Table
Parameters
Specification
Relaxed Condition
tWC
45
80
tWH
15
20
tWP
25
60
tRC
50
80
tREH
15
20
tRP
25
60
UNIT : ns
tREA
30
60
tCEA
45
75
Sincerely,
chwoosun@sec.samsung.com
Product Planning & Application Eng.
Memory Division
Samsung Electronics Co.
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