K9GAG08B0M
K9GAG08U0M K9LBG08U1M
AC Characteristics for Operation
Parameter
Data Transfer from Cell to Register
ALE to RE Delay
CLE to RE Delay
Ready to RE Low
RE Pulse Width
WE High to Busy
Read Cycle Time
RE Access Time
CE Access Time
RE High to Output Hi-Z
CE High to Output Hi-Z
CE High to ALE or CLE Don’t Care
RE High to Output Hold
RE Low to Output Hold
CE High to Output Hold
RE High Hold Time
Output Hi-Z to RE Low
RE High to WE Low
WE High to RE Low
Device Resetting Time(Read/Program/Erase)
Symbol
t
R
t
AR
t
CLR
t
RR
t
RP
t
WB
t
RC
t
REA
t
CEA
t
RHZ
t
CHZ
t
CSD
t
RHOH
t
RLOH
t
COH
t
REH
t
IR
t
RHW
t
WHR
t
RST
Min
3.3V(2.7V)
-
10
10
20
12
-
25
-
-
-
-
10
15
5
15
10
0
100
60
-
Preliminary
FLASH MEMORY
Max
3.3V(2.7V)
60
-
-
-
-
100
-
20
25
100
30
-
-
-
-
-
-
-
-
5/10/500
(1)
Unit
µs
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
µs
NOTE:
1. If reset command(FFh) is written at Ready state, the device goes into Busy for maximum 5
µ
s.
13
SAMSUNG [ SAMSUNG SEMICONDUCTOR ]
