KA2425A
SPEECH NETWORK WITH DIALER INTERFACE
(Continued)
Symbol
Test Conditions
Min
Typ
Max
Unit
ECTRICAL CHARACTERISTICS
Characteristic
SYSTEM AMPLIFIERS
T
X
Gain
TXO Bias Voltage
TXO Bias Voltage
TXO Bias Voltage
TXO Bias Voltage
TXI input Resistance
R
X
RXO Bias voltage
RXO Source current
RXO Source current
RXO High Voltage
RXO Low Voltage
SIDETONE AMPLIFIER
Gain (TXO to STA)
Speech Mode
Speech Mode
Pulse Mode
Pulse Mode
STA Bias Voltage
MICROPHONE, RECEIVER CONTROLS
MIC Saturation Voltage
MIC Leakage Current
RMT Resistance
RMT Delay
EQUALIZATION AMPLIFIER
GAIN (V + to EQ)
Speech Mode
Speech Mode
Pulse Mode
Pulse Mode
EQ Bias Voltage
Speech Mode
Pulse Mode
Speech, Pulse Mode
G
V (TX)
V
BIAS (SPM)
V
BIAS (TM)
V
OL (SPM)
V
OL (SPM)
R
I (TXI)
V
BIAS (AM)
I
SOURCE (SM)
I
SOURCE (PTM)
V
OH (AM)
V
OL (AM)
TXI to TXO
Speech/Pulse Mode
Tone Mode
Speech/Pulse Mode
Speech/Pulse Mode
24
0.45
V
R
-25
V
R
-25
-
-
26
0.52
V
R
-5.0
V
R
-5.0
125
10
28
0.60
-
-
250
-
dB
xV
R
mV
mV
mV
KΩ
xV
R
mA
µA
mV
mV
All Mode
Speech Mode
Pulse/tone Mode
All Mode
All Mode
0.45
1.5
200
V
R
-100
-
0.52
2.0
400
V
R
-50
50
0.60
-
-
-
150
G
V (STA)
@V
LR
= 0.5V
@V
LR
= 2.5V
@V
LR
= 0.2V
@V
LR
= 1.0V
-
-
-
-
0.65
-15
-21
-15
-21
0.8
-
-
-
-
0.9
xV
R
dB
V
BIAS (STA)
All Modes
V
SAT (MIC)
I
LKG (MIC)
R
RMT (SM)
R
RMT (DM)
t
D (RMT)
Speech Mode,1 = 500µA
Dialing Mode, Pin 1=3.0V
Speech Mode
Dialing Mode
Dialing to Speech
-
-
-
5.0
2.0
50
0
8.0
10
4.0
125
5.0
15
18
20
mV
µA
Ω
KΩ
ms
@ V
LR
= 0.5V
G
V (EQ)
@ V
LR
= 2.5V
@ V
LR
= 0.2V
@ V
LR
= 1.0V
V
BIAS (EQ)
@ V
LR
= 0.5V
@ V
LR
= 0.5V
@ V
LR
= 2.5V
-
-
-
-
-
-
-
-12
-2.5
-12
-2.5
0.66
1.3
3.3
-
-
-
-
-
-
-
V
dc
dB
SAMSUNG [ SAMSUNG SEMICONDUCTOR ]
