KM6164000B Family
Document Title
256Kx16 bit Low Power CMOS Static RAM
CMOS SRAM
Revision History
Revision No.
0.0
0.1
History
Initial draft
Revise
- Die name change ; A to B
Finalize
Revise
- Operating current update and release.
I
CC
(Read/Write) = 30/60
→
15/75mA
I
CC1
(Read/Write) = 30/60
→
15/75mA
I
CC2
= 160
→
130mA
Revise
- Change datasheet format
- Remove I
CC
write value from table.
Revise
- Change test load at 55ns: 100pF
→
50pF
Errarta correction
Draft Data
June 28, 1996
September 19, 1996
Remark
Advance
Preliminary
1.0
2.0
December 17, 1996
February 17, 1997
Final
Final
3.0
February 17, 1998
Final
4.0
4.01
June 22, 1998
August 8, 1998
Final
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and
products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.
1
Revision 4.01
June 1998
SAMSUNG [ SAMSUNG SEMICONDUCTOR ]
