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KM681000CLG-5 参数 Datasheet PDF下载

KM681000CLG-5图片预览
型号: KM681000CLG-5
PDF下载: 下载PDF文件 查看货源
内容描述: 128K ×8位低功耗CMOS静态RAM [128K x8 bit Low Power CMOS Static RAM]
分类和应用: 存储内存集成电路静态存储器光电二极管
文件页数/大小: 10 页 / 191 K
品牌: SAMSUNG [ SAMSUNG SEMICONDUCTOR ]
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PRELIMINARY
KM681000C Family
Document Title
128K x8 bit Low Power CMOS Static RAM
CMOS SRAM
Revision History
Revision No.
0.0
0.1
History
Initial draft
First revision
- Seperate read and write at I
CC
, I
CC1
I
CC =
I
CC1
Read : 15mA, Write : 35mA
Finalized
- Add 70ns speed bin for commercial product and 85ns speed
bin for industrial.
Revised
- Improved operating current
Add typical value.
I
CC
Read : 15mA
10mA(Remove write current)
I
CC2
: 90mA
60mA
- Speed bin change
Remove 45ns from commercial part
Remove 55ns and 100ns from industrial part.
Draft Date
November 22, 1995
April 15, 1996
Remark
Design target
Preliminary
1.0
September 5, 1996
Final
2.0
November 5, 1997
Final
The attached data sheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and
products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.
1
Revision 2.0
November 1997