PRELIMINARY
KM681000C Family
RECOMMENDED DC OPERATING CONDITIONS
1)
Item
Supply voltage
Ground
Input high voltage
Input low voltage
Symbol
Vcc
Vss
V
IH
V
IL
Min
4.5
0
2.2
-0.5
3)
Typ
5.0
0
-
-
Max
5.5
0
Vcc+0.5
2)
0.8
Unit
V
V
V
V
CMOS SRAM
Note
1. Commercial Product : T
A
=0 to 70°C and Industrial Product :T
A
=-40 to 85°C, otherwise specified.
2. Overshoot : Vcc+3.0V for≤30ns pulse width.
3. Undershoot : -3.0V for≤30ns pulse width.
4. Overshoot and undershoot are sampled, not 100% tested.
CAPACITANCE
1
)
(f=1MHz, T
A
=25°C)
Item
Input capacitance
Input/Output capacitance
1. Capacitance is sampled not, 100% tested.
Symbol
C
IN
C
IO
Test Condition
V
IN
=0V
V
IO
=0V
Min
-
-
Max
6
8
Unit
pF
pF
DC AND OPERATING CHARACTERISTICS
Item
Input leakage current
Output leakage current
Operating power supply current
Average operating current
Symbol
I
LI
I
LO
I
CC
I
CC1
I
CC2
Output low voltage
Output high voltage
Standby Current(TTL)
KM681000CL
Standby
Current
(CMOS)
KM681000CL-L
KM681000CLI
KM681000CLI-L
I
SB1
V
OL
V
OH
I
SB
V
IN
=Vss to Vcc
CS
1
=V
IH
or CS
2
=V
IL
or OE=V
IH
or WE=V
IL,
V
IO
=Vss to Vcc
I
IO
=0mA, CS
1
=V
IL
, CS
2
=V
IH
, V
IN
=V
IH
or V
IL
, Read
Cycle time=1µs, 100% duty, I
IO
=0mA, CS
1
≤0.2V,
CS
2
≥V
CC
-0.2V, V
IN
≤0.2V
or V
IN
≥V
CC
-0.2V
Read
Write
-
-
2.4
-
-
-
-
-
Test Conditions
Min
-1
-1
-
-
Typ
-
-
5
2
20
45
-
-
-
1
0.3
1
0.3
Max
1
1
10
5
35
60
0.4
-
3
50
10
50
15
µA
mA
V
V
mA
Unit
µA
µA
mA
mA
Cycle time=Min, 100% duty, I
IO
=0mA, CS1=V
IL
, CS2=V
IH,
V
IN
=V
IL
or V
IH
I
OL
=2.1mA
I
OH
=-1.0mA
CS
1
=V
IH,
CS
2
=V
IL,
Other input=V
IL
or V
IH
CS
1
≥Vcc-0.2V,
CS2≥Vcc-0.2V
or CS
2
≤0.2V
Other input =0~Vcc
Low Power
Low Low Power
Low power
Low Low Power
4
Revision 2.0
November 1997
SAMSUNG [ SAMSUNG SEMICONDUCTOR ]
