KMM366S1623CT
KMM366S1623CT SDRAM DIMM
Preliminary
PC100 SDRAM MODULE
16Mx64 SDRAM DIMM based on 8Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD
GENERAL DESCRIPTION
The Samsung KMM366S1623CT is a 16M bit x 64 Synchronous
Dynamic RAM high density memory module. The Samsung
KMM366S1623CT consists of sixteen CMOS 8M x 8 bit with
4banks Synchronous DRAMs in TSOP-II 400mil package and a
2K EEPROM in 8-pin TSSOP package on a 168-pin glass-epoxy
substrate. Two 0.1uF decoupling capacitors are mounted on the
printed circuit board in parallel for each SDRAM.
The KMM366S1623CT is a Dual In-line Memory Module and is
intended for mounting into 168-pin edge connector sockets.
Synchronous design allows precise cycle control with the use of
system clock. I/O transactions are possible on every clock cycle.
Range of operating frequencies, programmable latencies allows
the same device to be useful for a variety of high bandwidth, high
performance memory system applications.
FEATURE
• Performance range
Part No.
Max Freq. (Speed)
KMM366S1623CT-G8
125MHz (8ns @ CL=3)
KMM366S1623CT-GH
100MHz (10ns @ CL=2)
KMM366S1623CT-GL
100MHz (10ns @ CL=3)
Burst mode operation
Auto & self refresh capability (4096 Cycles/64ms)
LVTTL compatible inputs and outputs
Single 3.3V
±
0.3V power supply
MRS cycle with address key programs
Latency (Access from column address)
Burst length (1, 2, 4, 8 & Full page)
Data scramble (Sequential & Interleave)
All inputs are sampled at the positive going edge of the
system clock
Serial presence detect with EEPROM
PCB :
Height (1,375mil),
double sided component
•
•
•
•
•
•
•
•
PIN CONFIGURATIONS (Front side/back side)
Pin Front Pin
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
V
SS
DQ0
DQ1
DQ2
DQ3
V
DD
DQ4
DQ5
DQ6
DQ7
DQ8
V
SS
DQ9
DQ10
DQ11
DQ12
DQ13
V
DD
DQ14
DQ15
*CB0
*CB1
V
SS
NC
NC
V
DD
WE
DQM0
Front
Pin Front Pin
DQ18
DQ19
V
DD
DQ20
NC
*V
REF
CKE1
V
SS
DQ21
DQ22
DQ23
V
SS
DQ24
DQ25
DQ26
DQ27
V
DD
DQ28
DQ29
DQ30
DQ31
V
SS
CLK2
NC
WP
**SDA
**SCL
V
DD
85
86
87
88
89
90
91
92
93
94
95
96
97
98
99
100
101
102
103
104
105
106
107
108
109
110
111
112
Back
V
SS
DQ32
DQ33
DQ34
DQ35
V
DD
DQ36
DQ37
DQ38
DQ39
DQ40
V
SS
DQ41
DQ42
DQ43
DQ44
DQ45
V
DD
DQ46
DQ47
*CB4
*CB5
V
SS
NC
NC
V
DD
CAS
DQM4
Pin
113
114
115
116
117
118
119
120
121
122
123
124
125
126
127
128
129
130
131
132
133
134
135
136
137
138
139
140
Back
DQM5
CS1
RAS
V
SS
A1
A3
A5
A7
A9
BA0
A11
V
DD
CLK1
*A12
V
SS
CKE0
CS3
DQM6
DQM7
*A13
V
DD
NC
NC
*CB6
*CB7
V
SS
DQ48
DQ49
Pin Back
141
142
143
144
145
146
147
148
149
150
151
152
153
154
155
156
157
158
159
160
161
162
163
164
165
166
167
168
DQ50
DQ51
V
DD
DQ52
NC
*V
REF
NC
V
SS
DQ53
DQ54
DQ55
V
SS
DQ56
DQ57
DQ58
DQ59
V
DD
DQ60
DQ61
DQ62
DQ63
V
SS
CLK3
NC
**SA0
**SA1
**SA2
V
DD
29 DQM1 57
58
CS0
30
59
31
DU
60
32
V
SS
61
33
A0
62
34
A2
63
35
A4
64
36
A6
65
37
A8
38 A10/AP 66
67
39
BA1
68
40
V
DD
69
41
V
DD
42 CLK0 70
71
43
V
SS
72
44
DU
73
45
CS2
46 DQM2 74
47 DQM3 75
76
48
DU
77
49
V
DD
78
50
NC
79
51
NC
80
52 *CB2
81
53 *CB3
82
54
V
SS
55 DQ16 83
56 DQ17 84
PIN NAMES
Pin Name
A0 ~ A11
BA0 ~ BA1
DQ0 ~ DQ63
CLK0 ~ CLK3
CS0 ~ CS3
RAS
CAS
WE
DQM0 ~ 7
V
DD
V
SS
*V
REF
SDA
SCL
SA0 ~ 2
WP
DU
NC
Function
Address input (Multiplexed)
Select bank
Data input/output
Clock input
Chip select input
Row address strobe
Column address strobe
Write enable
DQM
Power supply (3.3V)
Ground
Power supply for reference
Serial data I/O
Serial clock
Address in EEPROM
Write protection
Don′t use
No connection
CKE0 ~ CKE1 Clock enable input
* These pins are not used in this module.
**
These pins should be NC in the system
which does not support SPD.
SAMSUNG ELECTRONICS CO., Ltd. reserves the right to change products and specifications without notice.
REV. 1 June 1998
SAMSUNG [ SAMSUNG SEMICONDUCTOR ]
