2SA1262
Silicon PNP Epitaxial Planar Transistor
(Complement to type 2SC3179)
s
Absolute maximum ratings
(Ta=25°C)
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Tj
T
stg
2SA1262
–60
–60
–6
–4
–1
30(Tc=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
Application :
Audio and General Purpose
(Ta=25°C)
2SA1262
–100
max
–100
max
–60
min
40
min
–0.6
max
15
typ
90
typ
V
MHz
pF
12.0min
4.0max
s
Electrical Characteristics
Symbol
I
CBO
I
EBO
V
(BR)CEO
h
FE
V
CE
(sat)
f
T
C
OB
Conditions
V
CB
=–60V
V
EB
=–6V
I
C
=–25mA
V
CE
=–4V, I
C
=–1A
I
C
=–2A, I
B
=–0.2A
V
CE
=–12V, I
E
=0.2A
V
CB
=–10V, f=1MHz
External Dimensions
MT-25(TO220)
3.0
±0.2
10.2
±0.2
4.8
±0.2
2.0
±0.1
Unit
µ
A
µ
A
16.0
±0.7
V
8.8
±0.2
a
b
ø3.75
±0.2
1.35
0.65
+0.2
-0.1
2.5
B C E
2.5
1.4
s
Typical Switching Characteristics (Common Emitter)
V
CC
(V)
–20
R
L
(Ω)
10
I
C
(A)
–2
V
BB1
(V)
–10
V
BB2
(V)
5
I
B1
(mA)
–200
I
B2
(mA)
200
t
on
(
µ
s)
0.25typ
t
stg
(
µ
s)
0.75typ
t
f
(
µ
s)
0.25typ
Weight : Approx 2.6g
a. Type No.
b. Lot No.
I
C
– V
CE
Characteristics
(Typical)
C ol l e c t o r - E m i t te r S at u r a t i o n Vo lt a g e V
C E(s at)
( V )
–4
V
C E
( sat ) – I
B
Characteristics
(Typical)
– 1 .5
I
C
– V
B E
Temperature Characteristics
(Typical)
–4
( V
C E
=– 4 V )
–8
–3
0m
A
–60m
A
–50m A
C o l l e c t o r C u r r e nt I
C
( A)
–40 mA
–30m A
C o l l ec to r C u r r e n t I
C
( A )
–3
– 1 .0
Tem
p
Cas
e
125
˚C (
–2
–20m A
–2
)
–10mA
–1
I
C
= – 3A
– 2A
–1 A
0
–0.1
I
B
=–5mA
0
0
–1
–2
–3
–4
–5
–6
–0.5
–0.1
–0.5
–1
0
0
– 0 .5
–30˚C
25˚C
–1
(Cas
– 0 .5
mp)
(Cas
e Tem
p)
e Te
–1 . 0
– 1. 5
Col l e ct or - Em it t er Vo l t ag e V
C E
(V )
Bas e C ur r en t I
B
( A)
Ba s e - E m i t to r V o l t a ge V
BE
( V)
(V
C E
= – 4 V )
500
D C C ur re nt Ga i n h
FE
DC C ur r e nt Ga i n h
FE
200
12 5˚ C
100
2 5˚ C
– 30 ˚ C
50
( V
C E
= –4 V)
Transient Thermal Resistance
θ
j -a
( ˚ C / W )
h
FE
– I
C
Characteristics
(Typical)
h
F E
– I
C
Temperature Characteristics
(Typical)
θ
j - a
– t Characteristics
5
Typ
100
50
1
20
–0.01
– 0. 1
–0 .5
–1
–4
20
– 0 .0 2
– 0. 1
C ol l ec t or C ur r e nt I
C
( A)
–1
–4
0.7
1
10
Time t(ms)
100
1000
C ol l ec t or Cur ren t I
C
(A)
f
T
– I
E
Characteristics
(Typical)
60
(V
C E
=– 1 2 V )
–10
Safe Operating Area
(Single Pulse)
30
Pc – Ta Derating
1m
50
Cu t-o ff F r e q u e n c y f
T
( M H
Z
)
Col lec to r Cu rr en t I
C
(A )
M ax im um P o w e r Di s s i p a t i o n P
C
( W )
–5
10
s
10
m
s
0m
s
W
ith
40
D
Typ
C
20
In
fin
ite
he
30
–1
at
si
nk
20
–0.5
Without Heatsink
Natural Cooling
10
10
W i th o u t H e a t s i n k
0
0.005 0.01
–0.1
–2
2
–5
–10
–50
– 10 0
0
0
25
50
75
1 00
12 5
1 50
0.05
0.1
0 .5
1
3
Em i t t er C u rre nt I
E
(A )
Co ll e ct o r - Em i t te r Vo lt a ge V
C E
( V)
A m b i en t T e m p e r a t ur e T a ( ˚ C )
14
SANKEN [ SANKEN ELECTRIC ]
