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2SA1295 参数 Datasheet PDF下载

2SA1295图片预览
型号: 2SA1295
PDF下载: 下载PDF文件 查看货源
内容描述: PNP硅外延平面型晶体管(音频和通用) [Silicon PNP Epitaxial Planar Transistor(Audio and General)]
分类和应用: 晶体晶体管
文件页数/大小: 1 页 / 27 K
品牌: SANKEN [ SANKEN ELECTRIC ]
   
LAPT
s
Absolute maximum ratings
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Tj
T
stg
2SA1295
–230
–230
–5
–17
–5
200(Tc=25°C)
150
–55 to +150
2SA1295
Application :
Audio and General
(Ta=25°C)
2SA1295
–100
max
–100
max
–230
min
50
min
–2.0
max
35
typ
500
typ
V
MHz
pF
20.0min
4.0max
2
3
1.05
+0.2
-0.1
5.45
±0.1
B
C
E
5.45
±0.1
0.65
+0.2
-0.1
3.0
+0.3
-0.1
Silicon PNP Epitaxial Planar Transistor
(Complement to type 2SC3264)
(Ta=25°C)
Unit
V
V
V
A
A
W
°C
°C
s
Electrical Characteristics
Symbol
I
CBO
I
EBO
V
(BR)CEO
h
FE
V
CE
(sat)
f
T
C
OB
Conditions
V
CB
=–230V
V
EB
=–5V
I
C
=–25mA
V
CE
=–4V, I
C
=–5A
I
C
=–5A, I
B
=–0.5A
V
CE
=–12V, I
E
=2A
V
CB
=–10V, f=1MHz
External Dimensions
MT-200
36.4
±0.3
24.4
±0.2
2-ø3.2
±0.1
9
7
21.4
±0.3
2.1
6.0
±0.2
Unit
µ
A
µ
A
V
a
b
∗h
FE
Rank O(50 to 100), Y(70 to 140)
s
Typical Switching Characteristics (Common Emitter)
V
CC
(V)
–60
R
L
(Ω)
12
I
C
(A)
–5
V
BB1
(V)
–10
V
BB2
(V)
5
I
B1
(mA)
–500
I
B2
(mA)
500
t
on
(
µ
s)
0.35typ
t
stg
(
µ
s)
1.50typ
t
f
(
µ
s)
0.30typ
Weight : Approx 18.4g
a. Type No.
b. Lot No.
I
C
– V
CE
Characteristics
(Typical)
C o l l e c to r - E m i t t er S a tu r a t i o n Vo lt a g e V
CE (sa t)
(V )
–17
A
.0
–3
–2
.
0A
V
CE
( sat ) – I
B
Characteristics
(Typical)
– 3
I
C
– V
BE
Temperature Characteristics
(Typical)
( V
CE
= –4 V )
– 17
– 15
C ol l e c t o r C ur r e nt I
C
( A)
–1
.5A
–15
–1
.0A
m
500
A
C o l l e c t o r C u r r e nt I
C
( A )
–30
0mA
–2
–10
–200
mA
– 10
p)
Tem
˚C (
C
–1 00 m A
–5
–50mA
25˚C
125
I
B
=–20mA
0
– 5A
0
0
0
–1
–2
–3
–4
0
–0 .5
–1 . 0
–1 .5
– 2. 0
0
–0.8
–30
˚C (
Cas
I
C
= –1 0A
–5
ase
–1
e Te
mp)
–1.6
– 2 .4
– 3. 2
C ol l e ct or - Em it t er Vo l t ag e V
C E
(V )
Bas e C ur r en t I
B
( A)
B as e - Em i t t o r Vo l t a g e V
BE
( V )
( V
C E
=– 4 V )
200
D C Cu rr en t Ga i n h
FE
D C C u r r e n t G ai n h
FE
200
1 25 ˚ C
100
( V
C E
= –4 V)
Transient Thermal Resistance
θ
j -a
( ˚ C / W )
h
F E
– I
C
Characteristics
(Typical)
h
F E
– I
C
Temperature Characteristics
(Typical)
θ
j - a
– t Characteristics
2
Typ
100
2 5˚ C
1
50
50
–3 0 ˚ C
0.5
10
–0.02
–0. 1
– 0.5
–1
–5
–10 –17
10
– 0 .0 2
–0 .1
– 0. 5
–1
–5
–1 0 – 17
0.1
1
10
100
T i m e t( m s )
1 00 0 2 00 0
C ol l ec t or C u rre nt I
C
(A )
Co l le c to r Cu r r e n t I
C
( A)
f
T
– I
E
Characteristics
(Typical)
(V
C E
=– 12 V )
60
–40
Safe Operating Area
(Single Pulse)
2 00
10
m
s
Pc – Ta Derating
–10
Cut- off F r e q u e n c y f
T
( M H
Z
)
C oll ec tor Cu r r e n t I
C
(A )
–5
D
Ma x im um P ow e r D i s s i p a t i on P
C
( W )
C
1 60
W
ith
40
In
Ty
p
fin
1 20
ite
he
at
–1
– 0 .5
Without Heatsink
Natural Cooling
– 0 .1
si
nk
80
20
40
W i t ho u t He a t s i n k
0
25
50
75
100
125
150
0
0.02
0.1
1
10
–0.05
–3
– 10
–1 00
–3 00
5
0
Em i t t er C urr en t I
E
(A )
C ol l ec t or - Em i tt e r Vol t ag e V
C E
( V)
Am b i e n t T e m p er a t u r e T a( ˚ C )
16