LAPT
s
Absolute maximum ratings
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Tj
T
stg
2SA1303
–150
–150
–5
–14
–3
125(Tc=25°C)
150
–55 to +150
2SA1303
Application :
Audio and General Purpose
(Ta=25°C)
2SA1303
–100
max
–100
max
–150
min
50
min
–2.0
max
50
typ
400
typ
V
pF
20.0min
4.0max
Silicon PNP Epitaxial Planar Transistor
(Complement to type 2SC3284)
(Ta=25°C)
Unit
V
V
V
A
A
W
°C
°C
s
Electrical Characteristics
Symbol
I
CBO
I
EBO
V
(BR)CEO
h
FE
V
CE
(sat)
f
T
C
OB
Conditions
V
CB
=–150V
V
EB
=–5V
I
C
=–25mA
V
CE
=–4V, I
C
=–5A
I
C
=–5A, I
B
=–0.5A
V
CE
=–12V, I
E
=2A
V
CB
=–10V, f=1MHz
External Dimensions
MT-100(TO3P)
5.0
±0.2
15.6
±0.4
9.6
2.0
1.8
4.8
±0.2
2.0
±0.1
Unit
µ
A
µ
A
V
19.9
±0.3
4.0
a
b
ø3.2
±0.1
MHz
2
3
1.05
+0.2
-0.1
0.65
+0.2
-0.1
1.4
∗h
FE
Rank O(50 to 100), P(70 to 140), Y(90 to 180)
5.45
±0.1
B
C
E
s
Typical Switching Characteristics (Common Emitter)
V
CC
(V)
–60
R
L
(Ω)
12
I
C
(A)
–5
V
BB1
(V)
–10
V
BB2
(V)
5
I
B1
(mA)
–500
I
B2
(mA)
500
t
on
(
µ
s)
0.25typ
t
stg
(
µ
s)
0.85typ
t
f
(
µ
s)
0.2typ
5.45
±0.1
Weight : Approx 6.0g
a. Type No.
b. Lot No.
I
C
– V
CE
Characteristics
(Typical)
C o l l e c to r - E m i t t er S a tu r a t i o n Vo lt a g e V
CE (sa t)
(V )
00
–6
mA
00
m
A
m
m
00
400
–
A
V
C E
( sa t) – I
B
Characteristics
(Typical)
–3
I
C
– V
B E
Temperature Characteristics
(Typical)
( V
CE
= – 4 V )
–1 4
A
–3
–12
C o l l e c t o r C u r r e nt I
C
( A )
–7
–5
00
mA
–200
mA
–150mA
C o l l e c to r C u r r e n t I
C
( A )
–1 0
–2
Tem
p)
–8
–1 00 mA
se
Tem
C (C
–4
I
B
=–20mA
–5 A
0
0
–1
–2
–3
–4
0
0
–0.2
– 0 .4
– 0. 6
– 0. 8
–1 .0
0
0
25˚
–1
Ba s e- E m i t t or V o l t a ge V
B E
( V )
–30
˚C (
I
C
= – 10 A
125
˚
ase
–1
Cas
–50mA
–5
C(
Ca
eT
emp
)
p)
–2
C ol le ct o r - Em i t t er V ol ta ge V
C E
( V)
Ba s e C ur r en t I
B
( A)
(V
C E
= – 4 V )
200
D C C u r r e n t G ai n h
FE
D C C u r r e n t G ai n h
FE
200
1 25 ˚ C
100
( V
C E
= – 4V)
Transient Thermal Resistance
θ
j- a
(˚ C/ W )
h
FE
– I
C
Characteristics
(Typical)
h
F E
– I
C
Temperature Characteristics
(Typical)
θ
j - a
– t Characteristics
3
Typ
100
2 5˚ C
– 30 ˚ C
1
0.5
50
50
20
–0.02
–0. 1
–0 .5
–1
–5 –10 –14
30
–0.02
–0 . 1
– 0. 5
–1
–5
–1 0 –1 4
0.1
1
10
10 0
T i m e t( m s )
1 00 0 2 0 0 0
C o ll e ct o r C urr en t I
C
(A )
C o ll e ct o r Cu r r e nt I
C
( A)
f
T
– I
E
Characteristics
(Typical)
(V
C E
=– 12 V )
80
–40
Safe Operating Area
(Single Pulse)
1 30
Pc – T a Derating
M a xim u m P o we r D i s s i p a t i o n P
C
( W )
1m
s
10
m
10
Cu t-o ff F r e q u e n c y f
T
( M H
Z
)
60
Co lle ct o r C ur re n t I
C
( A )
Ty
p
–10
1 00
0m
s
s
W
ith
D
–5
C
In
fin
ite
he
40
at
si
nk
50
–1
Without Heatsink
Natural Cooling
20
–0.5
0
0.02
0.1
1
Em i t t er C urr en t I
E
(A )
10
–0.2
–3
– 10
–1 00
–2 00
3. 5
0
W i t h o ut H e a ts i n k
0
25
50
75
100
125
1 50
C o ll e ct o r - Em i t te r Vo lt a ge V
C E
( V)
Am b i e n t T e m p er a t u r e T a( ˚ C )
17
SANKEN [ SANKEN ELECTRIC ]
