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2SA1673 参数 Datasheet PDF下载

2SA1673图片预览
型号: 2SA1673
PDF下载: 下载PDF文件 查看货源
内容描述: PNP硅外延平面型晶体管(音频和通用) [Silicon PNP Epitaxial Planar Transistor(Audio and General Purpose)]
分类和应用: 晶体晶体管放大器局域网
文件页数/大小: 1 页 / 28 K
品牌: SANKEN [ SANKEN ELECTRIC ]
   
2SA1673
Silicon PNP Epitaxial Planar Transistor
(Complement to type 2SC4388)
s
Absolute maximum ratings
(Ta=25°C)
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Tj
T
stg
2SA1673
–180
–180
–6
–15
–4
85(Tc=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
Application :
Audio and General Purpose
(Ta=25°C)
2SA1673
–10
max
–10
max
–180
min
50
min
–2.0
max
20
typ
500
typ
V
MHz
16.2
s
Electrical Characteristics
Symbol
I
CBO
I
EBO
V
(BR)CEO
h
FE
V
CE
(sat)
f
T
C
OB
Conditions
V
CB
=–180V
V
EB
=–6V
I
C
=–50mA
V
CE
=–4V, I
C
=–3A
I
C
=–5A, I
B
=–0.5A
V
CE
=–12V, I
E
=0.5A
V
CB
=–10V, f=1MHz
External Dimensions
FM100(TO3PF)
0.8
±0.2
15.6
±0.2
5.5
±0.2
3.45
±0.2
5.5
ø3.3
±0.2
1.6
Unit
µ
A
23.0
±0.3
V
9.5
±0.2
µ
A
a
b
pF
1.75
2.15
1.05
+0.2
-0.1
5.45
±0.1
1.5
4.4
5.45
±0.1
1.5
0.65
+0.2
-0.1
3.3
0.8
∗h
FE
Rank O(50 to 100), P(70 to 140), Y(90 to 180)
s
Typical Switching Characteristics (Common Emitter)
V
CC
(V)
–40
R
L
(Ω)
4
I
C
(A)
–10
V
BB1
(V)
–10
V
BB2
(V)
5
I
B1
(A)
–1
I
B2
(A)
1
t
on
(
µ
s)
0.6typ
t
stg
(
µ
s)
0.9typ
t
f
(
µ
s)
0.2typ
3.35
B
C
E
Weight : Approx 6.5g
a. Type No.
b. Lot No.
I
C
– V
CE
Characteristics
(Typical)
1A
V
CE
( sat ) – I
B
Characteristics
(Typical)
C ol l e c t o r - E m i tt e r S at u r a t i o n V o lt a g e V
CE (sa t)
(V )
– 3
I
C
– V
BE
Temperature Characteristics
(Typical)
–15
( V
CE
= – 4V )
–15
A
0.6
–0.4
A
C ol l e c t o r C u r r e nt I
C
( A )
–0.2
–10
A
C o l l e c t o r C u r r e n t I
C
( A )
–2
–10
–0 .1 A
se T
emp
)
Temp
)
(Case
–5
–50mA
–1
–5
(Ca
I
B
=–20mA
I
C
= – 10 A
– 5A
0
0
–0 . 5
– 1 .0
–1 . 5
– 2. 0
0
0
0
0
–1
–2
–3
–4
–30˚C (C
125
˚C
25˚C
ase Te
–1
B as e - Em i t t o r Vo l t a g e V
B E
( V )
mp)
C ol l ec t or - Emi t t e r V ol ta ge V
C E
(V )
Bas e C ur r en t I
B
( A)
( V
C E
=– 4 V )
300
D C C ur re n t Gai n h
F E
DC C ur r e nt Ga i n h
FE
200
25˚C
100
– 3 0˚ C
( V
C E
= – 4 V)
12 5˚ C
Transient Thermal Resistance
θ
j- a
(˚ C/ W )
h
F E
– I
C
Characteristics
(Typical)
h
F E
– I
C
Temperature Characteristics
(Typical)
θ
j - a
– t Characteristics
3
Typ
100
50
1
0.5
50
10
–0.02
–0.1
– 0. 5
–1
–5 – 1 0 – 1 5
20
–0.02
– 0. 1
–0 . 5
–1
–5
–10 –15
0.1
1
10
100
Time t(ms)
1 0 00 20 0 0
C o ll e ct o r C ur ren t I
C
( A)
C o ll e ct o r C u r r e nt I
C
( A)
f
T
– I
E
Characteristics
(Typical)
(V
C E
=–1 2 V )
30
–40
Safe Operating Area
(Single Pulse)
100
3m
Pc – Ta Derating
Cu t-o ff F r e q u e nc y f
T
( M H
Z
)
Typ
Co lle c to r C u r r e n t I
C
( A)
20
–10
–5
D
C
10
s
M ax im um P o w er Di s s i p a t i o n P
C
( W )
10
s
m
s
0m
80
60
–2
–1
–0.5
40
10
Without Heatsink
Natural Cooling
20
Without Heatsink
0
25
50
75
100
125
150
–0.2
0
0.02
–0.1
–3
0.1
1
Em i t t er C urre nt I
E
(A)
10
– 10
– 10 0
–2 0 0
3.5
0
Col l ec t or - Em i tt e r Vol t ag e V
C E
( V)
A m b i e n t T e m p e r a tu r e T a ( ˚ C )
26
3.0
–2
W
ith
In
fin
ite
he
at
si
nk