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2SA1668 参数 Datasheet PDF下载

2SA1668图片预览
型号: 2SA1668
PDF下载: 下载PDF文件 查看货源
内容描述: PNP硅外延平面晶体管 [Silicon PNP Epitaxial Planar Transistor]
分类和应用: 晶体晶体管功率双极晶体管放大器局域网
文件页数/大小: 1 页 / 29 K
品牌: SANKEN [ SANKEN ELECTRIC ]
   
2SA1667/1668
Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC4381/4382)
s
Absolute maximum ratings
(Ta=25°C)
Ratings
Symbol
2SA1667 2SA1668
V
CBO
–150
–200
V
CEO
V
EBO
I
C
I
B
P
C
Tj
T
stg
–150
–6
–2
–1
25(Tc=25°C)
150
–55 to +150
–200
Unit
V
V
V
A
A
W
°C
°C
I
EBO
V
(BR)CEO
h
FE
V
CE
(sat)
f
T
C
OB
Application :
TV Vertical Output, Audio Output Driver and General Purpose
(Ta=25°C)
s
Electrical Characteristics
Symbol
I
CBO
V
CB
=
V
EB
=–6V
I
C
=–25mA
V
CE
=–10V, I
C
=–0.7A
I
C
=–0.7A, I
B
=–0.07A
V
CE
=–12V, I
E
=0.2A
V
CB
=–10V, f=1MHz
Conditions
External Dimensions
FM20 (TO220F)
4.0
±0.2
10.1
±0.2
4.2
±0.2
2.8 c0.5
Ratings
2SA1667
2SA1668
–10
max
–150
–150
min
–10
max
–200
–10
max
–200
min
60
min
Unit
µ
A
V
µ
A
V
V
MHz
pF
16.9
±0.3
8.4
±0.2
13.0min
–1.0
max
20
typ
60
typ
1.35
±0.15
1.35
±0.15
0.85
+0.2
-0.1
0.45
+0.2
-0.1
2.54
2.2
±0.2
2.4
±0.2
s
Typical Switching Characteristics (Common Emitter)
V
CC
(V)
–20
R
L
(Ω)
20
I
C
(A)
–1
V
BB1
(V)
–10
V
BB2
(V)
5
I
B1
(mA)
–100
I
B2
(mA)
100
t
on
(
µ
s)
0.4typ
t
stg
(
µ
s)
1.5typ
t
f
(
µ
s)
0.5typ
2.54
3.9
B C E
±0.2
0.8
±0.2
a
b
ø3.3
±0.2
Weight : Approx 2.0g
a. Part No.
b. Lot No.
I
C
– V
C E
Characteristics
(Typical)
–2.0
Co l l e c t o r - Em i t t e r Sa t u r a t i o n V o lt a ge V
C E(s at)
( V )
V
CE
(sat) – I
B
Characteristics
(Typical)
–3
I
C
– V
B E
Temperature Characteristics
(Typical)
( V
CE
= –1 0 V )
–2
–5
–1.6
C o l l e c t o r C u r r e nt I
C
( A)
0m
A
–2
C o l l e c t o r C u r r e nt I
C
( A )
–1 . 6
–1.2
–1 . 2
mp)
Case
T
25˚C
(
(Cas
–0.8
I
B
=–5mA/Step
–0 . 8
e Te
–1
125˚
C
–0.4
I
C
= – 2A
–0 .5 A
–1 A
–0 . 4
0
0
–2
–4
–6
–8
–10
0
–2
–10
–100
–1000
0
0
– 0 .2
– 0. 4
–0.6
– 0 .8
–30˚C
(Case
Temp)
emp)
–1.0
– 1. 2
Co l l ect or - Emi tt er Vo l t ag e V
C E
(V )
Ba s e Cu r r en t I
B
( m A)
Ba s e - E m i t t or V o l t a ge V
BE
( V )
h
FE
– I
C
Characteristics
(Typical)
(V
C E
= – 1 0 V )
400
DC Cu r r en t G a i n h
FE
h
F E
– I
C
Temperature Characteristics
(Typical)
( V
C E
= –1 0V )
400
1 25 ˚ C
DC Cu r r en t G a i n h
FE
25 ˚ C
Transient Thermal Resistance
θ
j -a
( ˚ C/ W )
5
θ
j- a
– t Characteristics
Typ
100
– 30 ˚ C
100
1
40
–0.01
–0 .1
C ol l ec t or C ur ren t I
C
(A )
–1
–2
30
–0.01
– 0. 1
Co l l ec to r C ur r en t I
C
( A)
–1
–2
0 .5
1
10
Time t(ms)
100
10 0 0
f
T
– I
E
Characteristics
(Typical)
50
(V
C E
=– 1 2 V )
–5
Safe Operating Area
(Single Pulse)
25
1m
5m
s
20
ms
P c – Ta Derating
Natural Cooling
Silicone Grease
Heatsink: Aluminum
in mm
M ax im um P ow er D i s s i p a t i o n P
C
( W )
s
Cu t-o ff Fre qu e n c y f
T
(M H
Z
)
40
Co lle cto r Cu r r e n t I
C
( A )
Typ
30
–1
D
20
C
W
ith
In
150x150x2
1 0 0x
1 0
10
0x
fin
ite
he
20
–0.1
Without Heatsink
Natural Cooling
1. 2SA1 6 67
2. 2SA1 6 68
1
2
2
at
si
nk
50x50x2
10
Without Heatsink
2
0
0
0.01
0.1
Em i t t er C urre nt I
E
(A)
1
2
–0.01
–1
– 10
– 10 0
– 30 0
0
25
50
75
100
125
150
Co l l ec to r - Em i tt er Vo l ta ge V
C E
( V)
Am b i e n t T e m p er a t u r e T a( ˚ C )
25