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2SA1725 参数 Datasheet PDF下载

2SA1725图片预览
型号: 2SA1725
PDF下载: 下载PDF文件 查看货源
内容描述: PNP硅外延平面型晶体管(音频和通用) [Silicon PNP Epitaxial Planar Transistor(Audio and General Purpose)]
分类和应用: 晶体晶体管放大器局域网
文件页数/大小: 1 页 / 26 K
品牌: SANKEN [ SANKEN ELECTRIC ]
   
2SA1725
Silicon PNP Epitaxial Planar Transistor
(Complement to type 2SC4511)
s
Absolute maximum ratings
(Ta=25°C)
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Tj
T
stg
2SA1725
–80
–80
–6
–6
–3
30(Tc=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
Application :
Audio and General Purpose
(Ta=25°C)
2SA1725
–10
max
–10
max
–80
min
50
min
–0.5
max
20
typ
150
typ
V
MHz
pF
13.0min
s
Electrical Characteristics
Symbol
I
CBO
I
EBO
V
(BR)CEO
h
FE
V
CE
(sat)
f
T
C
OB
Conditions
V
CB
=–80V
V
EB
=–6V
I
C
=–25mA
V
CE
=–4V, I
C
=–2A
I
C
=–2A, I
B
=–0.2A
V
CE
=–12V, I
E
=0.5A
V
CB
=–10V, f=1MHz
External Dimensions
FM20(TO220F)
4.0
±0.2
10.1
±0.2
4.2
±0.2
2.8 c0.5
Unit
µ
A
16.9
±0.3
V
8.4
±0.2
µ
A
1.35
±0.15
1.35
±0.15
0.85
+0.2
-0.1
0.45
+0.2
-0.1
2.54
2.2
±0.2
2.4
±0.2
∗h
FE
Rank O(50 to 100), P(70 to 140), Y(90 to 180)
s
Typical Switching Characteristics (Common Emitter)
V
CC
(V)
–30
R
L
(Ω)
10
I
C
(A)
–3
V
BB1
(V)
–10
V
BB2
(V)
5
I
B1
(A)
–0.3
I
B2
(A)
0.3
t
on
(
µ
s)
0.18typ
t
stg
(
µ
s)
1.10typ
t
f
(
µ
s)
0.21typ
2.54
3.9
B C E
±0.2
0.8
±0.2
a
b
ø3.3
±0.2
Weight : Approx 2.0g
a. Type No.
b. Lot No.
I
C
– V
CE
Characteristics
(Typical)
C o l l e c t o r - Em i t t e r Sa t u r a ti o n V ol t ag e V
CE (s at)
(V )
–6
–2
00
m
A
–1
5
A
0m
V
C E
( sat ) – I
B
Characteristics
(Typical)
–3
I
C
– V
B E
Temperature Characteristics
(Typical)
–6
( V
CE
= –4 V )
–100m
A
–5
C o l l e c to r C u r r e n t I
C
( A )
–8 0m A
C ol l e c t o r C u r r e nt I
C
( A)
–4
–50mA
–2
–4
–3
–30mA
Tem
p)
emp
se
se T
–2
–20mA
–1
I
C
= –6 A
– 4A
–2 A
0
0
–0 .5
–1 . 0
–1 . 5
–2
˚C
125
0
0
–1
–2
–3
–4
0
0
– 0. 5
–30˚
–1
25˚C
C (C
I
B
=–10mA
(Ca
ase
(Ca
–1
Tem
p)
)
– 1 .5
Co l l ect o r - Emi tt er Vo l ta ge V
C E
(V )
Bas e C ur r e nt I
B
( A)
Ba s e - E m i t to r V o l t a ge V
B E
( V )
(V
C E
= – 4 V )
300
DC C ur re nt Ga i n h
F E
DC C ur r e nt Ga i n h
F E
300
12 5˚ C
25 ˚ C
100
–3 0 ˚ C
( V
C E
= –4 V )
Transient Thermal Resistance
θ
j -a
( ˚C / W )
h
FE
– I
C
Characteristics
(Typical)
h
F E
– I
C
Temperature Characteristics
(Typical)
θ
j - a
– t Characteristics
5
Typ
100
1
50
50
30
–0.02
–0 . 1
– 0.5
–1
–5 –6
30
– 0 .0 2
0.5
0.4
1
10
1 00
Time t(ms)
1 0 0 0 2 0 00
–0 . 1
– 0. 5
–1
–5 –6
Co l le ct o r C urre nt I
C
(A )
C o ll e ct o r Cu r r e nt I
C
( A)
f
T
– I
E
Characteristics
(Typical)
( V
C E
=– 1 2 V )
30
–20
–10
Safe Operating Area
(Single Pulse)
30
Pc – T a Derating
Typ
Cu t-o ff Fre q u e n c y f
T
( M H
Z
)
–5
20
C oll ec tor Cu rr e n t I
C
(A )
100ms
DC
m
s
M ax im um P ow er D i s s i p a t i o n P
C
( W )
10
W
ith
20
In
fin
ite
he
–1
–0.5
at
si
nk
10
10
Without Heatsink
Natural Cooling
–0.1
0
0.02
– 0 .0 5
–3
Without Heatsink
2
–5
– 10
– 50
–1 0 0
0
0. 0 5 0. 1
0 .5
1
5 6
0
25
50
75
10 0
1 25
150
Em i t t er Curre nt I
E
( A)
C o ll e ct o r - Em i t te r Vo lt ag e V
C E
( V )
A m b i e n t T em p e r a tu r e T a ( ˚ C )
30