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2SA1726 参数 Datasheet PDF下载

2SA1726图片预览
型号: 2SA1726
PDF下载: 下载PDF文件 查看货源
内容描述: PNP硅外延平面型晶体管(音频和通用) [Silicon PNP Epitaxial Planar Transistor(Audio and General Purpose)]
分类和应用: 晶体晶体管功率双极晶体管放大器局域网
文件页数/大小: 1 页 / 26 K
品牌: SANKEN [ SANKEN ELECTRIC ]
   
2SA1726
Silicon PNP Epitaxial Planar Transistor
(Complement to type 2SC4512)
s
Absolute maximum ratings
(Ta=25°C)
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Tj
T
stg
2SA1726
–80
–80
–6
–6
–3
50(Tc=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
Application :
Audio and General Purpose
(Ta=25°C)
2SA1726
–10
max
–10
max
–80
min
50
min
–0.5
max
20
typ
150
typ
V
pF
12.0min
4.0max
s
Electrical Characteristics
Symbol
I
CBO
I
EBO
V
(BR)CEO
h
FE
V
CE
(sat)
f
T
C
OB
Conditions
V
CB
=–80V
V
EB
=–6V
I
C
=–25mA
V
CE
=–4V, I
C
=–2A
I
C
=–2A, I
B
=–0.2A
V
CE
=–12V, I
E
=0.5A
V
CB
=–10V, f=1MHz
External Dimensions
MT-25(TO220)
3.0
±0.2
10.2
±0.2
4.8
±0.2
2.0
±0.1
Unit
µ
A
µ
A
V
16.0
±0.7
8.8
±0.2
a
b
ø3.75
±0.2
MHz
1.35
∗h
FE
Rank O(50 to 100), P(70 to 140), Y(90 to 180)
2.5
B C E
0.65
+0.2
-0.1
2.5
1.4
s
Typical Switching Characteristics (Common Emitter)
V
CC
(V)
–30
R
L
(Ω)
10
I
C
(A)
–3
V
BB1
(V)
–10
V
BB2
(V)
5
I
B1
(A)
–0.3
I
B2
(A)
0.3
t
on
(
µ
s)
0.18typ
t
stg
(
µ
s)
1.10typ
t
f
(
µ
s)
0.21typ
Weight : Approx 2.6g
a. Type No.
b. Lot No.
I
C
– V
CE
Characteristics
(Typical)
–6
–2
00
m
A
–1
5
V
CE
(sa t) – I
B
Characteristics
(Typical)
–3
C o l l e c t o r - E m i t t er S a tu r a t i o n Vo l t a g e V
C E( sat)
( V )
I
C
– V
B E
Temperature Characteristics
(Typical)
–6
( V
CE
= –4 V )
A
0m
–100m
A
–8 0m A
C o l l e c t o r C u r r e nt I
C
( A )
C o l l e c t o r C u r r e n t I
C
( A)
–4
–50mA
–2
–4
–30mA
p)
Tem
emp
se T
se
–2
–20mA
–1
I
C
= – 6 A
– 4A
– 2A
0
0
– 0. 5
– 1 .0
– 1. 5
–2
˚C
125
25˚C
0
0
–1
–2
–3
–4
0
0
–0 . 5
–30˚
C (C
I
B
=–10mA
(Ca
ase
(Ca
–1
Tem
p)
)
–1.5
Co l le ct o r -Emi tte r V ol ta ge V
C E
(V )
B as e C ur r en t I
B
( A)
B as e - Em i t t o r Vo l t a g e V
BE
( V)
h
FE
– I
C
Characteristics
(Typical)
(V
C E
=– 4 V )
300
D C C ur re nt Ga i n h
FE
h
F E
– I
C
Temperature Characteristics
(Typical)
( V
C E
= – 4V )
300
DC C u r r e nt Ga i n h
FE
1 25 ˚ C
2 5˚ C
100
–3 0˚ C
Transient Thermal Resistance
θ
j- a
( ˚ C /W )
5
θ
j - a
– t Characteristics
Typ
100
1
50
50
0. 5
0. 4
1
10
100
Time t(ms)
10 0 0 2 00 0
30
–0.02
–0 . 1
–0 .5
–1
–5 –6
30
–0.02
– 0. 1
–0 . 5
–1
– 5 –6
C o ll e ct o r C u rre nt I
C
(A )
C ol l ec t or C ur r en t I
C
( A)
f
T
– I
E
Characteristics
(Typical)
(V
C E
=– 1 2 V )
30
–20
–10
Safe Operating Area
(Single Pulse)
50
10
Pc – Ta Derating
Typ
C ut- off Fr eq u e n c y f
T
( M H
Z
)
–5
20
Co lle cto r Cu r r e n t I
C
( A )
m
s
M ax im um P ow er Di s s i p a ti o n P
C
( W )
100ms
40
W
ith
DC
In
fin
30
ite
he
–1
–0.5
at
si
nk
20
10
Without Heatsink
Natural Cooling
–0.1
0
0.02
–0.05
–3
10
Without Heatsink
0
25
50
75
1 00
125
150
0. 0 5 0 . 1
0 .5
1
5 6
–5
–1 0
– 50
– 10 0
2
0
Emi t t e r Cur ren t I
E
(A )
Co l le c to r - Em it t er Vo l ta ge V
C E
( V)
A m b i en t T e m p e r a t ur e T a ( ˚ C )
31