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2SA1746 参数 Datasheet PDF下载

2SA1746图片预览
型号: 2SA1746
PDF下载: 下载PDF文件 查看货源
内容描述: PNP硅外延平面型晶体管(斩波稳压器,开关及通用) [Silicon PNP Epitaxial Planar Transistor(Chopper Regulator, Switch and General Purpose)]
分类和应用: 晶体稳压器开关晶体管功率双极晶体管局域网
文件页数/大小: 1 页 / 27 K
品牌: SANKEN [ SANKEN ELECTRIC ]
   
L
OW
V
CE
(sat)
Silicon PNP Epitaxial Planar Transistor
s
Absolute maximum ratings
(Ta=25°C)
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Tj
T
stg
2SA1746
–70
–50
–6
–12(
Pulse
–20)
–4
60(Tc=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
2SA1746
Application :
Chopper Regulator, Switch and General Purpose
(Ta=25°C)
2SA1746
–10
max
–10
max
–50
min
50
min
–0.5
max
–1.2
max
25
typ
400
typ
V
V
16.2
s
Electrical Characteristics
Symbol
I
CBO
I
EBO
V
(BR)CEO
h
FE
V
CE
(sat)
V
BE
(sat)
f
T
C
OB
Conditions
V
CB
=–70V
V
EB
=–6V
I
C
=–25mA
V
CE
=–1V, I
C
=–5A
I
C
=–5A, I
B
=–80mA
I
C
=–5A, I
B
=–80mA
V
CE
=–12V, I
E
=1A
V
CB
=–10V, f=1MHz
External Dimensions
FM100(TO3PF)
0.8
±0.2
15.6
±0.2
5.5
±0.2
3.45
±0.2
5.5
ø3.3
±0.2
1.6
Unit
µ
A
23.0
±0.3
V
9.5
±0.2
µ
A
a
b
MHz
pF
1.75
2.15
1.05
+0.2
-0.1
5.45
±0.1
1.5
4.4
5.45
±0.1
1.5
0.65
+0.2
-0.1
3.3
0.8
s
Typical Switching Characteristics (Common Emitter)
V
CC
(V)
–20
R
L
(Ω)
4
I
C
(A)
–5
V
BB1
(V)
–10
V
BB2
(V)
5
I
B1
(mA)
–80
I
B2
(mA)
80
t
on
(
µ
s)
0.5typ
t
stg
(
µ
s)
0.6typ
t
f
(
µ
s)
0.3typ
3.35
B
C
E
Weight : Approx 6.5g
a. Type No.
b. Lot No.
I
C
– V
CE
Characteristics
(Typical)
C ol l e c t o r - E m i t te r S at u r a t i o n Vo lt a g e V
C E(s a t)
( V )
–12
V
CE
(sat) – I
B
Characteristics
(Typical)
–1.5
I
C
– V
B E
Temperature Characteristics
(Typical)
–12
( V
CE
=– 1 V )
–12mA
–10 0mA
–10
–70mA
–10
C o l l e c to r C u r r e n t I
C
( A )
C o l l e c t or C u r r e n t I
C
( A)
–8
–50mA
–1.0
–8
p)
–6
–30 mA
–6
mp)
em
(Ca
eTe
˚C
–4
–0.5
I
C
= – 1 0A
–3 A
– 1A
0
–3
–10
–100
Bas e C ur r en t I
B
( m A)
–1000
–5 A
25˚C
–4
125
–2
I
B
=–10mA
–2
0
0
–1
–2
–3
–4
–5
–6
0
0
– 0. 5
–30˚
C (C
–1.0
aseT
e
(Ca
s
mp)
seT
C o l l ect o r - Em i t t er V ol ta ge V
C E
( V)
Ba s e - E m i t to r V ol t ag e V
B E
( V )
(V
C E
= – 1 V)
500
D C Cu rr en t Ga i n h
F E
500
D C Cu r r en t G a i n h
FE
( V
C E
= –1 V)
Transient Thermal Resistance
θ
j -a
( ˚ C / W )
h
F E
– I
C
Characteristics
(Typical)
h
F E
– I
C
Temperature Characteristics
(Typical)
θ
j - a
– t Characteristics
4
125˚C
Typ
25˚C
–30˚C
1
100
100
0. 5
50
–0.03
–0.1
– 0.5
–1
–5
–10
50
– 0 .0 3
– 0 .1
–0 .5
–1
–5
–1 0
0. 2
1
10
100
Time t(ms)
3.0
–1.5
1000
C o ll e ct o r C urr en t I
C
(A)
C o ll e ct o r Cu r r e nt I
C
( A)
f
T
– I
E
Characteristics
(Typical)
40
( V
C E
=–1 2 V)
–30
Safe Operating Area
(Single Pulse)
60
10
0
µ
Pc – Ta Derating
C ut- off F r e q u e n c y f
T
( M H
Z
)
30
–10
Typ
M a xim u m P o we r D i s s i p at i o n P
C
( W )
1m
s
10
m
s
s
Col lec t o r Cu rr e n t I
C
(A )
40
W
–5
ith
In
fin
20
ite
he
at
si
20
nk
10
–1
Without Heatsink
Natural Cooling
–0.3
–3
Without Heatsink
0
0.1
1
Em it t e r C u rren t I
E
(A )
10
–10
–5 0
– 10 0
3 .5
0
0
25
50
75
10 0
125
150
Co l le c to r - E m it t er Vo l ta ge V
C E
( V)
Am b i e n t T em p er at u r e T a ( ˚ C )
32