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2SA1859 参数 Datasheet PDF下载

2SA1859图片预览
型号: 2SA1859
PDF下载: 下载PDF文件 查看货源
内容描述: PNP硅外延平面型晶体管(音频输出驱动和电视速度调制) [Silicon PNP Epitaxial Planar Transistor(Audio Output Driver and TV Velocity-modulation)]
分类和应用: 晶体晶体管电视驱动
文件页数/大小: 1 页 / 26 K
品牌: SANKEN [ SANKEN ELECTRIC ]
   
2SA1859/1859A
Silicon PNP Epitaxial Planar Transistor
(Complement to type 2SC4883/A)
s
Absolute maximum ratings
(Ta=25°C)
Symbol 2SA1859 2SA1859A
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Tj
T
stg
–150
–150
–6
–2
–1
20(Tc=25°C)
150
–55 to +150
–180
–180
Unit
V
V
V
A
A
W
°C
°C
Application :
Audio Output Driver and TV Velocity-modulation
(Ta=25°C)
s
Electrical Characteristics
Symbol
I
CBO
V
CB
=
I
EBO
V
(BR)CEO
h
FE
V
CE
(sat)
f
T
C
OB
V
EB
=–6V
I
C
=–10mA
V
CE
=–10V, I
C
=–0.7A
I
C
=–0.7A, I
B
=–70mA
V
CE
=–12V, I
E
=0.7A
V
CB
=–10V, f=1MHz
Conditions
External Dimensions
FM20(TO220F)
4.0
±0.2
10.1
±0.2
4.2
±0.2
2.8 c0.5
2SA1859 2SA1859A
–10
max
–150
–10
max
–180
min
–150
min
60 to 240
–1.0
max
60
typ
30
typ
–180
Unit
µ
A
µ
A
V
V
MHz
pF
13.0min
16.9
±0.3
8.4
±0.2
V
1.35
±0.15
1.35
±0.15
0.85
+0.2
-0.1
0.45
+0.2
-0.1
2.54
2.2
±0.2
2.4
±0.2
s
Typical Switching Characteristics (Common Emitter)
V
CC
(V)
–20
R
L
(Ω)
20
I
C
(A)
–1
V
BB1
(V)
–10
V
BB2
(V)
5
I
B1
(mA)
–100
I
B2
(mA)
100
t
on
(
µ
s)
0.5typ
t
stg
(
µ
s)
1.0typ
t
f
(
µ
s)
0.5typ
2.54
3.9
B C E
I
C
– V
C E
Characteristics
(Typical)
C o l l e c t o r - E m i t t er S a tu r a t i o n Vo lt a g e V
C E( sa t)
(V )
–2
A
V
CE
(sat) – I
B
Characteristics
(Typical)
–3
I
C
– V
B E
Temperature Characteristics
(Typical)
–2
( V
CE
=– 4 V )
A
0m
A
0m
00
–1
–6
–3
–15m
A
m
Co l l e c t o r Cu r r en t I
C
( A)
–1 0m A
–2
C o l l e c t or C u r r e n t I
C
( A )
–1
I
B
=–5mA
–1
p)
Tem
±0.2
0.8
±0.2
a
b
ø3.3
±0.2
Weight : Approx 6.5g
a. Type No.
b. Lot No.
p)
˚C (
C
ase
–1
I
C
= – 2 A
–0 . 5A
0
–2
–5
–10
– 1A
–50 –100
–500 –1000
0
0
0
0
–2
–4
–6
–8
–10
–0.5
B a s e - E m i t t o r Vo l ta g e V
BE
( V )
–30˚C (C
aseTem
25˚C
125
(Cas
eTem
p)
–1
C o l l ect o r - Em i t t er V ol ta ge V
C E
( V)
Bas e C ur r en t I
B
( m A)
h
FE
– I
C
Characteristics
(Typical)
( V
CE
= – 4 V )
300
DC Cu r r e nt Ga i n h
FE
h
F E
– I
C
Temperature Characteristics
(Typical)
Transient Thermal Resistance
θ
j-a
( ˚ C / W )
( V
C E
= –4 V)
300
12 5˚ C
D C C u r r e n t Gai n h
F E
7
5
θ
j- a
– t Characteristics
Typ
25 ˚ C
100
100
–3 0˚ C
50
–0.01
– 0. 1
–0 .5
–1
–2
50
– 0 .0 1
– 0 .1
–0 . 5
–1
–2
1
1
10
100
Time t(ms)
10 0 0 2 0 0 0
C ol l ec t or C u rre nt I
C
( A)
C o ll e ct o r C u r r e nt I
C
( A)
f
T
– I
E
Characteristics
(Typical)
( V
C E
=– 12 V )
100
–5
Safe Operating Area
(Single Pulse)
20
1m
s
Pc – Ta Derating
80
Cut- off F r e q u e n c y f
T
( M H
Z
)
Co lle ct o r C u r r e n t I
C
( A )
Typ
60
–1
–0.5
D
C
Ma x imu m P ow e r D i s s i p a t i o n P
C
(W )
10
ms
10
0m
s
W
ith
In
fin
ite
he
10
at
si
nk
40
–0.1
–0.5
Without Heatsink
Natural Cooling
1 . 2SA1 8 59
2 . 2 SA18 59 A
1
–5
– 10
2
20
0
0.01
0 . 05
0.1
0. 5
1
2
– 0 .0 1
–1
– 5 0 – 1 00 – 20 0
2
0
Without Heatsink
0
25
50
75
1 00
125
150
Em i t t er C urre nt I
E
(A )
Col l e ct or - Em i t te r Vol t ag e V
C E
( V)
A m b i en t T e m p e r a t ur e T a ( ˚ C )
33