2SA1907
Silicon PNP Epitaxial Planar Transistor
(Complement to type 2SC5099)
s
Absolute maximum ratings
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Tj
T
stg
2SA1907
–80
–80
–6
–6
–3
60(Tc=25°C)
150
–55 to +150
(Ta=25°C)
Unit
V
V
V
A
A
W
°C
°C
Application :
Audio and General Purpose
(Ta=25°C)
2SA1907
–10
max
–10
max
–80
min
50
min
∗
–0.5
max
20
typ
150
typ
V
MHz
16.2
s
Electrical Characteristics
Symbol
I
CBO
I
EBO
V
(BR)CEO
h
FE
V
CE
(sat)
f
T
C
OB
Conditions
V
CB
=–80V
V
EB
=–6V
I
C
=–50mA
V
CE
=–4V, I
C
=–2A
I
C
=–12A, I
B
=–0.2A
V
CE
=–12V, I
E
=0.5A
V
CB
=–10V, f=1MHz
External Dimensions
FM100(TO3PF)
0.8
±0.2
15.6
±0.2
5.5
±0.2
3.45
±0.2
5.5
ø3.3
±0.2
1.6
Unit
µ
A
23.0
±0.3
V
9.5
±0.2
µ
A
a
b
pF
1.75
2.15
1.05
+0.2
-0.1
5.45
±0.1
1.5
4.4
5.45
±0.1
1.5
0.65
+0.2
-0.1
3.3
0.8
∗h
FE
Rank O(50 to 100), P(70 to 140), Y(90 to 180)
s
Typical Switching Characteristics (Common Emitter)
V
CC
(V)
–30
R
L
(Ω)
10
I
C
(A)
–3
V
BB1
(V)
–10
V
BB2
(V)
5
I
B1
(A)
–0.3
I
B2
(A)
0.3
t
on
(
µ
s)
0.18typ
t
stg
(
µ
s)
1.10typ
t
f
(
µ
s)
0.21typ
3.35
B
C
E
Weight : Approx 6.5g
a. Type No.
b. Lot No.
I
C
– V
C E
Characteristics
(Typical)
–6
–2
00
m
50
V
CE
( sat ) – I
B
Characteristics
(Typical)
–3
C o l l e c t o r - Em i t t e r Sa t u r a ti o n V ol t ag e V
CE (s at)
( V )
I
C
– V
B E
Temperature Characteristics
(Typical)
–6
( V
CE
= –4 V )
A
–1
mA
–100m
A
–5
C o l l e c to r C u r r e n t I
C
( A )
–8 0m A
Co l l e c t o r Cu r r e n t I
C
( A)
–4
–50mA
–2
–4
–3
–30mA
p)
Tem
emp
se
(Ca
se T
–2
–20mA
–1
I
C
= –6 A
– 4A
–2A
0
0
– 0. 5
–1 .0
– 1. 5
–2
˚C
125
0
0
–1
–2
–3
–4
0
0
–30˚
–1
25˚C
C (C
I
B
=–10mA
ase
(Ca
–1
Ba s e - E m i t to r V ol t ag e V
BE
( V )
Tem
p)
)
3.0
– 1. 5
C ol l ec t or - Emi t ter Vo l t ag e V
C E
(V )
Bas e C ur r en t I
B
( A)
( V
C E
= – 4 V)
300
DC C u r r e nt Ga i n h
FE
DC C ur r e nt Ga i n h
FE
300
1 25 ˚ C
2 5˚ C
100
– 3 0˚ C
( V
C E
= – 4V )
Transient Thermal Resistance
θ
j- a
(˚ C/ W )
h
F E
– I
C
Characteristics
(Typical)
h
F E
– I
C
Temperature Characteristics
(Typical)
θ
j- a
– t Characteristics
5
Typ
100
1
50
50
0. 5
0. 3
30
–0.02
–0 . 1
–0 .5
–1
–5 –6
30
–0.02
– 0. 1
–0 . 5
–1
–5 – 6
1
10
100
Time t(ms)
1 0 00 2 0 0 0
C ol l e ct o r Cu rre nt I
C
( A)
C o ll e ct o r Cu r r e n t I
C
( A)
f
T
– I
E
Characteristics
(Typical)
( V
C E
=– 1 2 V )
30
–20
–10
Safe Operating Area
(Single Pulse)
60
P c – Ta Derating
Typ
Cu t-o ff F r e q u e n c y f
T
(M H
Z
)
Co lle ct o r C u r r e nt I
C
( A )
–5
DC
10
m
0m
s
s
10
s
M ax im um P o we r Di s s i p a t i o n P
C
( W )
1m
W
ith
20
40
In
fin
ite
he
at
si
nk
–1
–0.5
Without Heatsink
Natural Cooling
10
20
Without Heatsink
0
0.02
0. 05 0. 1
0. 5
1
5 6
–0.1
–5
– 10
– 50
–1 00
3.5
0
0
25
50
75
1 00
125
15 0
Emi t t e r Cu rre nt I
E
(A )
C ol l ec t or - Em i tt e r Vol t ag e V
C E
( V)
Am bi e nt T e m p e r a t u r e T a ( ˚ C )
35
SANKEN [ SANKEN ELECTRIC ]
