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2SB1352 参数 Datasheet PDF下载

2SB1352图片预览
型号: 2SB1352
PDF下载: 下载PDF文件 查看货源
内容描述: PNP硅外延平面型晶体管(用于驱动打印头,电磁阀,继电器,电机和通用) [Silicon PNP Epitaxial Planar Transistor(Driver for Printer Head, Solenoid, Relay, Motor and General Purpose)]
分类和应用: 晶体继电器晶体管功率双极晶体管开关电机驱动局域网
文件页数/大小: 1 页 / 28 K
品牌: SANKEN [ SANKEN ELECTRIC ]
   
(2 k
Ω)(10
0Ω) E
Darlington
s
Absolute maximum ratings
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Tj
T
stg
2SB1352
–60
–60
–6
–12(
Pulse
–20)
–1
60(Tc=25°C)
150
–55 to +150
(Ta=25°C)
Unit
V
V
V
A
A
W
°C
°C
2SB1352
s
Electrical Characteristics
Symbol
I
CBO
I
EBO
V
(BR)CEO
h
FE
V
CE
(sat)
V
BE
(sat)
f
T
C
OB
Conditions
V
CB
=–60V
V
EB
=–6V
I
C
=–10mA
V
CE
=–4V, I
C
=–10A
I
C
=–10A, I
B
=–20mA
I
C
=–10A, I
B
=–20mA
V
CE
=–12V, I
E
=1A
V
CB
=–10V, f=1MHz
2SB1352
–10
max
–10
max
–60
min
2000
min
–1.5
max
–2.0
max
130typ
170typ
V
V
16.2
B
Equivalent circuit
C
Silicon PNP Epitaxial Planar Transistor
Application :
Driver for Printer Head, Solenoid, Relay, Motor and General Purpose
(Ta=25°C)
Unit
External Dimensions
FM100(TO3PF)
0.8
±0.2
15.6
±0.2
5.5
±0.2
3.45
±0.2
5.5
ø3.3
±0.2
1.6
µ
A
mA
V
23.0
±0.3
9.5
±0.2
a
b
MHz
pF
1.75
2.15
1.05
+0.2
-0.1
5.45
±0.1
1.5
4.4
5.45
±0.1
1.5
0.65
+0.2
-0.1
3.3
0.8
s
Typical Switching Characteristics (Common Emitter)
V
CC
(V)
–40
R
L
(Ω)
4
I
C
(A)
–10
V
BB1
(V)
–10
V
BB2
(V)
5
I
B1
(mA)
–20
I
B2
(mA)
20
t
on
(
µ
s)
0.7typ
t
stg
(
µ
s)
1.5typ
t
f
(
µ
s)
0.6typ
3.35
B
C
E
Weight : Approx 6.5g
a. Type No.
b. Lot No.
I
C
– V
CE
Characteristics
(Typical)
C ol l e c t o r - E m i t te r S at u r a t i o n Vo lt a g e V
C E(s at)
( V )
–20
A
V
C E
(sat ) – I
B
Characteristics
(Typical)
–3
I
C
– V
BE
Temperature Characteristics
(Typical)
–2 0
( V
C E
=– 4 V )
m
6mA
–4mA
–3 m A
–2 mA
I
B
=–
10
C o l l e c to r C u r r e n t I
C
( A)
–15
Co l l e c t o r C ur r en t I
C
( A )
–1 5
–2
emp
˚C (
Cas
eT
(Ca
–1 A
–5
25˚C
0
0
–1
–2
–3
–4
–5
–6
0
–0.1
–1
–10
–100
0
0
–1
Ba s e - E m i t to r V ol t ag e V
BE
( V )
–30˚
C (C
125
–5
ase
–1
–5 A
se T
Tem
p)
–1mA
I
C
= – 10 A
emp
)
–10
–1 0
)
–2
Co l l ec t or - Emi t t er V ol ta ge V
C E
(V)
Ba se Cu r r e nt I
B
( m A)
(V
C E
=– 4 V )
20000
D C C u r r e n t Gai n h
F E
20000
D C C u r r e n t Gai n h
F E
10000
( V
C E
= – 4V)
Transient Thermal Resistance
θ
j -a
( ˚ C / W )
h
FE
– I
C
Characteristics
(Typical)
h
F E
– I
C
Temperature Characteristics
(Typical)
θ
j- a
– t Characteristics
5
10000
Typ
12
C
˚C
˚C
5000
25
5000
–30
1
1000
500
– 0 .3 – 0 . 5
0. 5
0. 3
1000
800
–0.3
–1
–5
–1 0
–20
–1
–5
–10
–20
1
10
Time t(ms)
1 00
3.0
– 2. 4
10 0 0
C ol l e ct or C urre nt I
C
(A )
C ol l ec t or C ur r en t I
C
( A)
f
T
– I
E
Characteristics
(Typical)
240
(V
C E
= –1 2 V )
–30
Safe Operating Area
(Single Pulse)
60
P c – Ta Derating
200
C ut- off F r e q ue n c y f
T
( M H
Z
)
Co lle cto r C ur re n t I
C
( A )
–10
–5
160
M ax im um P ow e r D i s s i p a t i o n P
C
( W )
DC
1m
10
m
s
s
40
W
Typ
120
ith
In
fin
ite
–1
–0.5
Without Heatsink
Natural Cooling
he
at
si
80
20
nk
40
–0.1
0
0.05 0.1
–0.05
–2
W i th o u t H e a t s i n k
–5
– 10
–5 0
– 10 0
3. 5
0
0
50
1 00
150
0. 5
1
5
10
20
Em i t t er C ur ren t I
E
( A)
C o ll e ct o r - Em i t te r Vo lt a ge V
C E
( V)
Am b i e n t T e m pe r a t u r e T a( ˚ C )
42